Depth-resolved impact of integration process on porosity and solvent diffusion in a SiOCH low-k material
Lépinay, M., Djourelov, N., Marinov, H., Broussous, L., Courouble, K., Licitra, C., Bertin, F., Rouessac, V., Ayral, A.
Published in Journal of porous materials (01.08.2014)
Published in Journal of porous materials (01.08.2014)
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Journal Article
TiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL Patterning
Ishikawa, H., Buisine, F., Courouble, K., Krejcirova, D., Broussous, Lucile, Fuard, D., Zoll, S., Iwasaki, A., Lamaury, A.
Published in Solid state phenomena (01.09.2014)
Published in Solid state phenomena (01.09.2014)
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Journal Article
A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage
Sacchettini, Y., Carrere, J.-P., Doyen, C., Duru, R., Courouble, K., Ricq, S., Goiffon, V., Magnan, P.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
Chevalier, P., Avenier, G., Ribes, G., Montagne, A., Canderle, E., Celi, D., Derrier, N., Deglise, C., Durand, C., Quemerais, T., Buczko, M., Gloria, D., Robin, O., Petitdidier, S., Campidelli, Y., Abbate, F., Gros-Jean, M., Berthier, L., Chapon, J. D., Leverd, F., Jenny, C., Richard, C., Gourhant, O., De-Buttet, C., Beneyton, R., Maury, P., Joblot, S., Favennec, L., Guillermet, M., Brun, P., Courouble, K., Haxaire, K., Imbert, G., Gourvest, E., Cossalter, J., Saxod, O., Tavernier, C., Foussadier, F., Ramadout, B., Bianchini, R., Julien, C., Ney, D., Rosa, J., Haendler, S., Carminati, Y., Borot, B.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding