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Year of Publication 08.02.2005
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Year of Publication 08.02.2005
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Efficiency GaN-based light emitting devices
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Year of Publication 08.02.2005
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Year of Publication 08.02.2005
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Year of Publication 19.08.2004
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Year of Publication 19.08.2004
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Year of Publication 22.06.2006
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Year of Publication 04.08.2004
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Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region
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Year of Publication 25.04.2006
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Year of Publication 25.04.2006
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Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region
Bour, David P, Takeuchi, Tetsuya, Tandon, Ashish, Chang, Ying-Lan, Tan, Michael R. T, Corzine, Scott W
Year of Publication 25.04.2006
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Year of Publication 25.04.2006
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InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
CHANG YING-IAN, TANDON ASHISH, CORZINE SCOTT W, TAN MICHAEL R. T, BOUR DAVID P
Year of Publication 04.05.2004
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Year of Publication 04.05.2004
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InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
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Year of Publication 04.05.2004
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Year of Publication 04.05.2004
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Apparatus and method of laser dissociation for mass spectrometry
Hansen, Stuart C, Le Cocq, Christian A, Li, Gangqiang, Corzine, Scott W
Year of Publication 04.11.2003
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Year of Publication 04.11.2003
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