Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
Conzatti, F., Pala, M. G., Esseni, D., Bano, E., Selmi, L.
Published in IEEE transactions on electron devices (01.08.2012)
Published in IEEE transactions on electron devices (01.08.2012)
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Journal Article
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study
Conzatti, F., De Michielis, M., Esseni, D., Palestri, P.
Published in Solid-state electronics (01.07.2009)
Published in Solid-state electronics (01.07.2009)
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Journal Article
Conference Proceeding
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
Conzatti, F., Pala, M. G., Esseni, D., Bano, E., Selmi, L.
Published in 2011 International Electron Devices Meeting (01.12.2011)
Published in 2011 International Electron Devices Meeting (01.12.2011)
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Conference Proceeding
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
Conzatti, F, Toniutti, P, Esseni, D, Palestri, P, Selmi, L
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors
De Michielis, M., Conzatti, F., Esseni, D., Selmi, L.
Published in IEEE transactions on electron devices (01.09.2011)
Published in IEEE transactions on electron devices (01.09.2011)
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Journal Article
Pseudospectral Methods for the Efficient Simulation of Quantization Effects in Nanoscale MOS Transistors
Paussa, A, Conzatti, F, Breda, D, Vermiglio, R, Esseni, D, Palestri, P
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Journal Article
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
Conzatti, F, Serra, N, Esseni, D, De Michielis, M, Paussa, A, Palestri, P, Selmi, L, Thomas, S M, Whall, T E, Leadley, D, Parker, E H C, Witters, L, Hytch, M J, Snoeck, E, Wang, T J, Lee, W C, Doornbos, G, Vellianitis, G, van Dal, M J H, Lander, R J P
Published in IEEE transactions on electron devices (01.06.2011)
Published in IEEE transactions on electron devices (01.06.2011)
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Journal Article
(Invited) Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials
Conzatti, Francesco, Esseni, David, Palestri, Pierpaolo, Selmi, Luca
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
Lizzit, D., Palestri, P., Esseni, D., Conzatti, F., Selmi, L.
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)
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Conference Proceeding
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study
Pala, M. G., Esseni, D., Conzatti, F.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study
Conzatti, F., De Michielis, M., Esseni, D., Palestri, P.
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
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Conference Proceeding
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering: Review invited paper
Esseni, D., Conzatti, F., De Michielis, M., Serra, N., Palestri, P., Selmi, L.
Published in Journal of computational electronics (01.10.2009)
Published in Journal of computational electronics (01.10.2009)
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Journal Article
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering: THE STATE OF COMPUTATIONAL ELECTRONICS IN EUROPE
ESSENI, D, CONZATTI, F, DE MICHIELIS, M, SERRA, N, PALESTRI, P, SELMI, L
Published in Journal of computational electronics (2009)
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Published in Journal of computational electronics (2009)
Journal Article
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
Conzatti, F., Pala, M. G., Esseni, D., Bano, E.
Published in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) (01.03.2012)
Published in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) (01.03.2012)
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Conference Proceeding
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Serra, N., Conzatti, F., Esseni, D., De Michielis, M., Palestri, P., Selmi, L., Thomas, S., Whall, T.E., Parker, E.H.C., Leadley, D.R., Witters, L., Hikavyy, A., Hytch, M.J., Houdellier, F., Snoeck, E., Wang, T.J., Lee, W.C., Vellianitis, G., van Dal, M.J.H., Duriez, B., Doornbos, G., Lander, R.J.P.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding