Search Results - "Consiglio, Steven" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Antiferroelectric negative capacitance from a structural phase transition in zirconia

by Hoffmann, Michael, Wang, Zheng, Tasneem, Nujhat, Zubair, Ahmad, Ravindran, Prasanna Venkatesan, Tian, Mengkun, Gaskell, Anthony Arthur, Triyoso, Dina, Consiglio, Steven, Tapily, Kandabara, Clark, Robert, Hur, Jae, Pentapati, Sai Surya Kiran, Lim, Sung Kyu, Dopita, Milan, Yu, Shimeng, Chern, Winston, Kacher, Josh, Reyes-Lillo, Sebastian E, Antoniadis, Dimitri, Ravichandran, Jayakanth, Slesazeck, Stefan, Mikolajick, Thomas, Khan, Asif Islam
Published in Nature communications (09.03.2022)

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Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

by Dey, Sonal, Tapily, Kandabara, Consiglio, Steven, Clark, Robert D., Wajda, Cory S., Leusink, Gert J., Woll, Arthur R., Diebold, Alain C.
Published in Journal of applied physics (28.09.2016)

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Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

by Vasić, Relja, Consiglio, Steven, Clark, Robert D., Tapily, Kandabara, Sallis, Shawn, Chen, Bo, Newby, David, Medikonda, Manasa, Raja Muthinti, Gangadhara, Bersch, Eric, Jordan-Sweet, Jean, Lavoie, Christian, Leusink, Gert J., Diebold, Alain C.
Published in Journal of applied physics (21.06.2013)

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The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design

The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design

by Tasneem, Nujhat, Islam, Muhammad M., Wang, Zheng, Chen, Hang, Hur, Jae, Triyoso, Dina, Consiglio, Steven, Tapily, Kanda, Clark, Robert, Leusink, Gert, Yu, Shimeng, Chern, Winston, Khan, Asif
Published in IEEE electron device letters (01.08.2021)

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Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

by Mukundan, Vineetha, Beckmann, Karsten, Tapily, Kandabara, Consiglio, Steven, Clark, Robert, Leusink, Gert, Cady, Nathaniel, Diebold, Alain C.
Published in MRS advances (01.01.2019)

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반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법

반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법

by CONSIGLIO STEVEN, TAPILY KANDABARA, CLARK ROBERT D, TRIYOSO DINA H
Year of Publication 10.04.2023

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Patent

Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study

Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study

by Tasneem, Nujhat, Islam, Muhammad M., Wang, Zheng, Zhao, Zijian, Upadhyay, Navnidhi, Lombardo, Sarah F., Chen, Hang, Hur, Jae, Triyoso, Dina, Consiglio, Steven, Tapily, Kanda, Clark, Robert, Leusink, Gert, Kurinec, Santosh, Datta, Suman, Yu, Shimeng, Ni, Kai, Passlack, Matthias, Chern, Winston, Khan, Asif
Published in IEEE transactions on electron devices (01.03.2022)

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Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2

by Chae, Kisung, Lombardo, Sarah F., Tasneem, Nujhat, Tian, Mengkun, Kumarasubramanian, Harish, Hur, Jae, Chern, Winston, Yu, Shimeng, Richter, Claudia, Lomenzo, Patrick D., Hoffmann, Michael, Schroeder, Uwe, Triyoso, Dina, Consiglio, Steven, Tapily, Kanda, Clark, Robert, Leusink, Gert, Bassiri-Gharb, Nazanin, Bandaru, Prab, Ravichandran, Jayakanth, Kummel, Andrew, Cho, Kyeongjae, Kacher, Josh, Khan, Asif Islam
Published in ACS applied materials & interfaces (17.08.2022)

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Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

by Rogers, Jack, Choi, Hyeonseon, Gassner, Steven, Nolting, Westly, Pennock, Daniel, Consiglio, Steven, LaBella, Vincent P.
Published in Journal of applied physics (21.11.2019)

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Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

by Mukundan, Vineetha, Consiglio, Steven, Triyoso, Dina H., Tapily, Kandabara, McBriarty, Martin E., Schujman, Sandra, Beckmann, Karsten, Hazra, Jubin, Kaushik, Vidya, Cady, Nathaniel, Clark, Robert D., Leusink, Gert J., Diebold, Alain C.
Published in Physica status solidi. A, Applications and materials science (01.05.2021)

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Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO 2

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO 2

by Chae, Kisung, Lombardo, Sarah F., Tasneem, Nujhat, Tian, Mengkun, Kumarasubramanian, Harish, Hur, Jae, Chern, Winston, Yu, Shimeng, Richter, Claudia, Lomenzo, Patrick D., Hoffmann, Michael, Schroeder, Uwe, Triyoso, Dina, Consiglio, Steven, Tapily, Kanda, Clark, Robert, Leusink, Gert, Bassiri-Gharb, Nazanin, Bandaru, Prab, Ravichandran, Jayakanth, Kummel, Andrew, Cho, Kyeongjae, Kacher, Josh, Khan, Asif Islam
Published in ACS applied materials & interfaces (17.08.2022)

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Journal Article

Ferroelectric Phase Content in 7nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

Ferroelectric Phase Content in 7nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

by Mukundan, Vineetha, Consiglio, Steven, Triyoso, Dina H, Tapily, Kandabara, McBriarty, Martin E, Schujman, Sandra, Beckmann, Karsten, Hazra, Jubin, Kaushik, Vidya, Cady, Nathaniel, Clark, Robert D, Leusink, Gert J, Diebold, Alain C
Published in Physica status solidi. A, Applications and materials science (01.05.2021)

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Journal Article

Ferroelectric Phase Content in 7 nm Hf (1− x ) Zr x O 2 Thin Films Determined by X‐Ray‐Based Methods

Ferroelectric Phase Content in 7 nm Hf (1− x ) Zr x O 2 Thin Films Determined by X‐Ray‐Based Methods

by Mukundan, Vineetha, Consiglio, Steven, Triyoso, Dina H., Tapily, Kandabara, McBriarty, Martin E., Schujman, Sandra, Beckmann, Karsten, Hazra, Jubin, Kaushik, Vidya, Cady, Nathaniel, Clark, Robert D., Leusink, Gert J., Diebold, Alain C.
Published in Physica status solidi. A, Applications and materials science (01.05.2021)

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Journal Article

RRAM Devices with Plasma Treated HfO2 with Ru as Top Electrode for In-Memory Computing Hardware

RRAM Devices with Plasma Treated HfO2 with Ru as Top Electrode for In-Memory Computing Hardware

by Patel, Yuvraj, Misra, Durga, Triyoso, Dina H., Tapily, Kandabara, Clark, Robert D, Consiglio, Steven, Pattanaik, Gyana, Cole, Christopher, Raley, Angelique, Wajda, Cory S, Leusink, Gert J
Published in ECS transactions (01.10.2021)

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Journal Article

RRAM Devices with Plasma Treated HfO 2 with Ru as Top Electrode for In-Memory Computing Hardware

RRAM Devices with Plasma Treated HfO 2 with Ru as Top Electrode for In-Memory Computing Hardware

by Patel, Yuvraj, Misra, Durga, Triyoso, Dina H., Tapily, Kandabara, Clark, Robert D, Consiglio, Steven, Pattanaik, Gyana, Cole, Christopher, Raley, Angelique, Wajda, Cory S, Leusink, Gert J
Published in ECS transactions (01.10.2021)

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Process Dependent Optimization of Dielectric and Metal Stacks for Multilevel Resistive Random-Access Memory

Process Dependent Optimization of Dielectric and Metal Stacks for Multilevel Resistive Random-Access Memory

by Zhao, Pengxiang, Misra, Durga, Triyoso, Dina, Kaushik, Vidya, Tapily, Kandabara, Clark, Robert D., Consiglio, Steven, Wajda, Cory S., Leusink, Gert J.
Published in ECS transactions (24.04.2020)

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Journal Article

Multilevel Resistive Switching in Hf-Based RRAM

Multilevel Resistive Switching in Hf-Based RRAM

by Jain, Barsha, Huang, Chia-sheng, Misra, Durgamadhab, Tapily, Kandabara, Clark, Robert D., Consiglio, Steven, Wajda, Cory S., Leusink, Gert J.
Published in ECS transactions (23.04.2019)

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Journal Article

Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO 2 for Analog In-Memory Computing Applications

Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO 2 for Analog In-Memory Computing Applications

by Consiglio, Steven, Higuchi, Hisashi, Ando, Takashi, Jamison, Paul, Seo, Soon-Cheon, Kong, Dexin, Kim, Youngseok, Tapily, Kandabara, Clark, Robert D, Hopstaken, Marinus, Cartier, Eduard, Tsunomura, Takaaki, Wajda, Cory S, Soave, Robert, Narayanan, Vijay, Leusink, Gert J
Published in ECS transactions (07.05.2021)

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Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack

Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack

by Di, Ming, Bersch, Eric, Clark, Robert D., Consiglio, Steven, Leusink, Gert J., Diebold, Alain C.
Published in Journal of applied physics (01.12.2010)

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Journal Article

Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications

Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications

by Consiglio, Steven, Zeng, Wanxue, Berliner, Nathaniel, Eisenbraun, Eric T.
Published in Journal of the Electrochemical Society (2008)

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