Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, Nicolas, Garcia Barros, Maxime, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Rémi, Ngo, Thi Huong, Alquier, Daniel, Cordier, Yvon
Published in Scientific reports (25.08.2020)
Published in Scientific reports (25.08.2020)
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Journal Article
Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon
Cordier, Yvon, Comyn, Rémi, Tottereau, Olivier, Frayssinet, Eric, Portail, Marc, Nemoz, Maud
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
Published in Micromachines (Basel) (12.10.2019)
Published in Micromachines (Basel) (12.10.2019)
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Journal Article
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
Cordier, Yvon, Comyn, Rémi, Frayssinet, Eric, Khoury, Mario, Lesecq, Marie, Defrance, Nicolas, De Jaeger, Jean‐Claude
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
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Journal Article
Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters
Ngo, Thi Huong, Comyn, Rémi, Frayssinet, Eric, Chauveau, Hyonju, Chenot, Sébastien, Damilano, Benjamin, Tendille, Florian, Beaumont, Bernard, Faurie, Jean-Pierre, Nahas, Nabil, Cordier, Yvon
Published in Journal of crystal growth (15.12.2020)
Published in Journal of crystal growth (15.12.2020)
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Journal Article
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon
Published in Solid-state electronics (01.02.2022)
Published in Solid-state electronics (01.02.2022)
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Journal Article
Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS
Comyn, Rémi, Cordier, Yvon, Aimez, Vincent, Maher, Hassan
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Nemoz, Maud, Vennéguès, Philippe, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon
Published in Journal of crystal growth (01.09.2022)
Published in Journal of crystal growth (01.09.2022)
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Journal Article
Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses
Frayssinet, Eric, Nguyen, Luan, Lesecq, Marie, Defrance, Nicolas, Garcia Barros, Maxime, Comyn, Rémi, Ngo, Thi Huong, Zielinski, Marcin, Portail, Marc, De Jaeger, Jean-Claude, Cordier, Yvon
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor
Cozette, Flavien, Hassan, Bilal, Rodriguez, Christophe, Frayssinet, Eric, Comyn, Rémi, Lecourt, François, Defrance, Nicolas, Labat, Nathalie, Boone, François, Soltani, Ali, Jaouad, Abdelatif, Cordier, Yvon, Maher, Hassan
Published in Semiconductor science and technology (01.03.2021)
Published in Semiconductor science and technology (01.03.2021)
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Journal Article
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Thi Huong, Ngo, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Rodriguez, Christophe, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon
Published in Semiconductor science and technology (01.02.2021)
Published in Semiconductor science and technology (01.02.2021)
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Journal Article
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS
Comyn, Rémi, Cordier, Yvon, Chenot, Sébastien, Jaouad, Abdelatif, Maher, Hassan, Aimez, Vincent
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article
CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
Portail, Marc, Frayssinet, Eric, Michon, Adrien, Rennesson, Stéphanie, Semond, Fabrice, Courville, Aimeric, Zielinski, Marcin, Comyn, Remi, Nguyen, Luan, Cordier, Yvon, Vennéguès, Philippe
Published in Crystals (Basel) (01.11.2022)
Published in Crystals (Basel) (01.11.2022)
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Journal Article
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS: Monolithic integration of ammonia-MBE-grown GaN-HEMTs with Si CMOS
Comyn, Rémi, Cordier, Yvon, Chenot, Sébastien, Jaouad, Abdelatif, Maher, Hassan, Aimez, Vincent
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article