Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC
Tucker, J.B., Rao, M.V., Papanicolaou, N.A., Mittereder, J., Elasser, A., Clock, A.W., Ghezzo, M., Holland, O.W., Jones, K.A.
Published in IEEE transactions on electron devices (01.12.2001)
Published in IEEE transactions on electron devices (01.12.2001)
Get full text
Journal Article
Switching characteristics of silicon carbide power PiN diodes
Elasser, A., Ghezzo, M., Krishnamurthy, N., Kretchmer, J., Clock, A.W., Brown, D.M., Chow, T.P.
Published in Solid-state electronics (01.02.2000)
Published in Solid-state electronics (01.02.2000)
Get full text
Journal Article
Silicon carbide GTOs: static and dynamic characterization
Elasser, A., Park, J., Clock, A.W., Arthur, S., Ghezzo, M., Kretchmer, J., Fedison, J., Chow, T.P.
Published in Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) (2001)
Published in Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) (2001)
Get full text
Conference Proceeding