The Optimization of 3.3 kV 4H-SiC JBS Diodes
Renz, Arne Benjamin, Shah, Vishal Ajit, Vavasour, Oliver James, Baker, Guy William Clarke, Bonyadi, Yegi, Sharma, Yogesh, Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Phil, Antoniou, Marina, Gammon, Peter Michael
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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Journal Article
Optimization of SiC device topologies for Single Event Immunity
Qi, Yunyi, Antoniou, Marina, Clarke Baker, Guy William, Renz, Arne Benjamin, Zhang, Luyang, Gammon, Peter Michael
Published in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (18.09.2022)
Published in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (18.09.2022)
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Conference Proceeding
The successful implementation of a phosphorous-based surface passivation treatment into an industrial 650 V 4H-SiC JBS fabrication process
Renz, Arne Benjamin, Clarke Baker, Guy William, Shah, Vishal Ajit, Mawby, Philip, Antoniou, Marina, Gammon, Peter Michael
Published in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (18.09.2022)
Published in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (18.09.2022)
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Conference Proceeding