Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors
Bebiche, S., Cisneros-Perez, P. A., Mohammed-Brahim, T., Harnois, M., Rault-Berthelot, J., Poriel, C., Jacques, E.
Published in Materials chemistry frontiers (01.01.2018)
Published in Materials chemistry frontiers (01.01.2018)
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Journal Article
Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene-dihydroindenofluorene semiconductorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8qm00193f
Bebiche, S, Cisneros-Perez, P. A, Mohammed-Brahim, T, Harnois, M, Rault-Berthelot, J, Poriel, C, Jacques, E
Year of Publication 23.08.2018
Year of Publication 23.08.2018
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Journal Article