Interfacial characteristics of Y^sub 2^O^sub 3^/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
Lin, YH, Lin, KY, Hsueh, WJ, Young, LB, Chang, TW, Chyi, JI, Pi, TW, Kwo, J, Hong, M
Published in Journal of crystal growth (01.11.2017)
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Published in Journal of crystal growth (01.11.2017)
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Optical characterization of isoelectronic ZnSe sub(1-xO) sub(x) semiconductors
Lin, Y C, Chung, H L, Ku, J T, Chen, CY, Chien, K F, Fan, W C, Lee, L, Chyi, JI, Chou, W C, Chang, W H, Chen, W K
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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AlGaN/GaN HEMT based liquid sensors
Mehandru, R., Luo, B., Kang, B.S., Kim, Jihyun, Ren, F., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.
Published in Solid-state electronics (01.02.2004)
Published in Solid-state electronics (01.02.2004)
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Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
Johnson, J.W., Zhang, A.P., Wen-Ben Luo, Fan Ren, Pearton, S.J., Park, S.S., Park, Y.J., Jenn-Inn Chyi
Published in IEEE transactions on electron devices (01.01.2002)
Published in IEEE transactions on electron devices (01.01.2002)
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Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods
Chiu, W.Y., Huang, T.W., Wu, Y.H., Huang, F.H., Chen, S.H., Chan, Y.J., Hou, C.H., Chien, H.T., Chyi, J.I.
Published in Journal of lightwave technology (01.03.2008)
Published in Journal of lightwave technology (01.03.2008)
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Comparison of GaN p-i-n and Schottky rectifier performance
Zhan, A.P., Dang, G.T., Fan Ren, Hyun Cho, Kyu-Pil Lee, Pearton, S.J., Jenn-Inn Chyi, Nee, T.-Y., Chuo, C.-C.
Published in IEEE transactions on electron devices (01.03.2001)
Published in IEEE transactions on electron devices (01.03.2001)
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GaN electronics for high power, high temperature applications
Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors
Chu, S.N.G., Ren, F., Pearton, S.J., Kang, B.S., Kim, S., Gila, B.P., Abernathy, C.R., Chyi, J.-I., Johnson, W.J., Lin, J.
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15.11.2005)
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15.11.2005)
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Growth of low density InGaAs quantum dots for single photon sources by metal–organic chemical vapour deposition
Hsieh, Tung-Po, Chang, Hsiang-Szu, Chen, Wen-Yen, Chang, Wen-Hao, Hsu, Tzu Min, Yeh, Nien-Tze, Ho, Wen-Jeng, Chiu, Pei-Chin, Chyi, Jen-Inn
Published in Nanotechnology (28.01.2006)
Published in Nanotechnology (28.01.2006)
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High voltage GaN Schottky rectifiers
Dang, G.T., Zhang, A.P., Ren, F., Cao, X.A., Pearton, S.J., Cho, H., Han, J., Chyi, J.-I., Lee, C.-M., Chuo, C.-C., Chu, S.N.G., Wilson, R.G.
Published in IEEE transactions on electron devices (01.04.2000)
Published in IEEE transactions on electron devices (01.04.2000)
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Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
Jin-Wei Shi, Hsu, H.-C., Huang, F.-H., Liu, W.-S., Chyi, J.-I., Ja-Yu Lu, Sun, C.-K., Ci-Ling Pan
Published in IEEE photonics technology letters (01.08.2005)
Published in IEEE photonics technology letters (01.08.2005)
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Optical piezoelectric transducer for nano-ultrasonics
LIN, Kung-Hsuan, CHERN, Gia-Wei, YU, Cheng-Ta, LIU, Tzn-Ming, PAN, Chang-Chi, CHEN, Guan-Ting, CHYI, Jen-Inn, HUANG, Sheng-Wen, LI, Pai-Chi, SUN, Chi-Kuang
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.08.2005)
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.08.2005)
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Resonant cavity-enhanced (RCE) photodetectors
Kishino, K., Unlu, M.S., Chyi, J.-I., Reed, J., Arsenault, L., Morkoc, H.
Published in IEEE journal of quantum electronics (01.08.1991)
Published in IEEE journal of quantum electronics (01.08.1991)
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Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance
Shi, J.-W., Hsieh, C.-A., Shiao, A.-C., Wu, Y.-S., Huang, F.-H., Chen, S.-H., Tsai, Y.-T., Chyi, J.-I.
Published in IEEE photonics technology letters (01.10.2005)
Published in IEEE photonics technology letters (01.10.2005)
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SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors
JOHNSON, J. W, GILA, B. P, REN, F, LUO, B, LEE, K. P, ABERNATHY, C. R, PEARION, S. J, CHYI, J. I, NEE, T. E, LEE, C. M, CHUO, C. C
Published in Journal of the Electrochemical Society (01.06.2001)
Published in Journal of the Electrochemical Society (01.06.2001)
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InGaN-GaN MQW LEDs with current blocking layer formed by selective activation
Lee, C.-M., Chuo, C.-C., Liu, Y.-C., Chen, I.-L., Chyi, J.-I.
Published in IEEE electron device letters (01.06.2004)
Published in IEEE electron device letters (01.06.2004)
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Device saturation behavior of submillimeter-wave membrane photonic transmitters
Ming-Chun Tien, Hsu-Hao Chang, Ja-Yu Lu, Li-Jin Chen, Shih-Yuan Chen, Ruey-Beei Wu, Wei-Sheng Liu, Chyi, J.-I., Chi-Kuang Sun
Published in IEEE photonics technology letters (01.03.2004)
Published in IEEE photonics technology letters (01.03.2004)
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MBE growth and characterisation of InGaAs quantum dot lasers
Chyi, Jen-Inn
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.06.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.06.2000)
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