Nitride-based concentrator solar cells grown on Si substrates
Liu, C.Y., Lai, C.C., Liao, J.H., Cheng, L.C., Liu, H.H., Chang, C.C., Lee, G.Y., Chyi, J.-I., Yeh, L.K., He, J.H., Chung, T.Y., Huang, L.C., Lai, K.Y.
Published in Solar energy materials and solar cells (01.10.2013)
Published in Solar energy materials and solar cells (01.10.2013)
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N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
Chiu, Hsien-Chin, Wu, Chia-Hsuan, Chi, Ji-Fan, Chyi, J.-I., Lee, G.-Y.
Published in Microelectronics and reliability (01.01.2015)
Published in Microelectronics and reliability (01.01.2015)
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Composition dependent Raman scattering of ZnSe1−xOx
Cheng, C.-C., Chen, W.-Y., Ke, H.-H., Chen, C.-Y., Chyi, J.-I., Hsu, T.M.
Published in Solid state communications (01.10.2013)
Published in Solid state communications (01.10.2013)
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Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs
Chen, P.-Y, Gao, Z.-Y, Ho, H.-C, Lin, H.-K, Hsin, Y.-M, Chyi, J.-I
Published in Electronics letters (01.08.2013)
Published in Electronics letters (01.08.2013)
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Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
Jin-Wei Shi, Hsu, H.-C., Huang, F.-H., Liu, W.-S., Chyi, J.-I., Ja-Yu Lu, Sun, C.-K., Ci-Ling Pan
Published in IEEE photonics technology letters (01.08.2005)
Published in IEEE photonics technology letters (01.08.2005)
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E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development
LIN, H.-K, FAN, D.-W, LEE, W.-C, WANN, C. H, LIN, Y.-C, CHIU, P.-C, CHIEN, C.-Y, LI, P.-W, CHYI, J.-I, KO, C.-H, KUAN, T.-M, HSIEH, M.-K
Published in Solid-state electronics (01.05.2010)
Published in Solid-state electronics (01.05.2010)
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Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions
Shi, J.-W., Chen, C.-C., Wang, C.-K., Lin, C.-S., Sheu, J.-K., Lai, W.-C., Kuo, C.-H., Tun, C.-J., Yang, T.-H., Tsao, F.-C., Chyi, J.-I.
Published in IEEE photonics technology letters (15.03.2008)
Published in IEEE photonics technology letters (15.03.2008)
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Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors
Lin, H.-K., Lin, Y.-C., Huang, F.-H., Fan, T.-W., Chiu, P.-C., Chyi, J.-I., Ko, C.-H., Kuan, T.-M., Hsieh, M.-K., Lee, W.-C., Wann, C.H.
Published in Solid-state electronics (01.04.2010)
Published in Solid-state electronics (01.04.2010)
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Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
Fang, J Y, Lee, G Y, Chyi, JI, Hsu, C P, Kang, Y W, Fang, K C, Kao, W L, Yao, D J, Hsu, CH, Huang, Y F
Published in Journal of applied physics (28.11.2013)
Published in Journal of applied physics (28.11.2013)
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GaN electronics for high power, high temperature applications
Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors
Chu, S.N.G., Ren, F., Pearton, S.J., Kang, B.S., Kim, S., Gila, B.P., Abernathy, C.R., Chyi, J.-I., Johnson, W.J., Lin, J.
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15.11.2005)
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15.11.2005)
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Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light
Shi, J.-W., Huang, H.-Y., Wang, C.-K., Sheu, J.-K., Lai, W.-C., Wu, Y.-S., Chen, C.-H., Chu, J.-T., Kuo, H.-C., Wei-Ping Lin, Tsung-Hsun Yang, Chyi, J.-I.
Published in IEEE photonics technology letters (15.12.2006)
Published in IEEE photonics technology letters (15.12.2006)
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Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors
Tzu Chieh Chen, Yueh Ting Lin, Chung Yi Lin, Chen, W.C., Meei Ru Chen, Hui-Ling Kao, Chyi, J.-I., Hsu, C.-H.
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.02.2008)
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01.02.2008)
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Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities
Chen, W.-Y., Yang, F.-S., Chang, H.-S., Cheng, C.-C., Wang, C.-J., Chiu, P.-C., Chyi, J.-I., Hsu, T.M.
Published in Solid state communications (01.10.2010)
Published in Solid state communications (01.10.2010)
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Journal Article
Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods
Chiu, W.Y., Huang, T.W., Wu, Y.H., Huang, F.H., Chen, S.H., Chan, Y.J., Hou, C.H., Chien, H.T., Chyi, J.I.
Published in Journal of lightwave technology (01.03.2008)
Published in Journal of lightwave technology (01.03.2008)
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Characterization of Sub-THz Photonic-Transmitters Based on GaAs-AlGaAs Uni-Traveling-Carrier Photodiodes and Substrate-Removed Broadband Antennas for Impulse-Radio Communication
Yu-Tai Li, Shi, J.-W., Cheng-Yu Huang, Nan-Wei Chen, Shu-Han Chen, Chyi, J.-I., Ci-Ling Pan
Published in IEEE photonics technology letters (15.08.2008)
Published in IEEE photonics technology letters (15.08.2008)
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AlGaN/GaN HEMT based liquid sensors
Mehandru, R., Luo, B., Kang, B.S., Kim, Jihyun, Ren, F., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.
Published in Solid-state electronics (01.02.2004)
Published in Solid-state electronics (01.02.2004)
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