Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster
Kidan Bae, Minjung Jin, Hajin Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jinchul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chulhee Jeon, Jongwoo Park
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking
Kim, Young-Ju, Kwon, Hye-Jung, Doo, Su-Yeon, Ahn, Minsu, Kim, Yong-Hun, Lee, Yong-Jae, Kang, Dong-Seok, Do, Sung-Geun, Lee, Chang-Yong, Cho, Gun-Hee, Park, Jae-Koo, Kim, Jae-Sung, Park, Kyungbae, Oh, Seunghoon, Lee, Sang-Yong, Yu, Ji-Hak, Yu, Kihun, Jeon, Chulhee, Kim, Sang-Sun, Park, Hyun-Soo, Lee, Jeong-Woo, Cho, Seung-Hyun, Park, Keon-Woo, Kim, Yongjun, Seo, Young-Hun, Shin, Chang-Ho, Lee, Chan-Yong, Bang, Sam-Young, Park, Younsik, Choi, Seouk-Kyu, Kim, Byung-Cheol, Han, Gong-Heum, Bae, Seung-Jun, Kwon, Hyuk-Jun, Choi, Jung-Hwan, Sohn, Young-Soo, Park, Kwang-Il, Jang, Seong-Jin, Jin, Gyoyoung
Published in IEEE journal of solid-state circuits (01.01.2019)
Published in IEEE journal of solid-state circuits (01.01.2019)
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Journal Article