Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures
Belorusov, D. A., Goldman, E. I., Chucheva, G. V.
Published in Journal of communications technology & electronics (01.09.2023)
Published in Journal of communications technology & electronics (01.09.2023)
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Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages
Belorusov, D. A., Goldman, E. I., Naryshkina, V. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2021)
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Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures
Afanasyev, M. S., Belorusov, D. A., Kiselev, D. A., Luzanov, V. A., Chucheva, G. V.
Published in Journal of communications technology & electronics (01.10.2023)
Published in Journal of communications technology & electronics (01.10.2023)
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Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures
Goldman, E. I., Levashov, S. A., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2019)
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Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State
Goldman, E. I., Naryshkina, V. G., Chucheva, G. V.
Published in Physics of the solid state (01.08.2020)
Published in Physics of the solid state (01.08.2020)
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Influence of the Molar Ratio Sr : Bi : Ta in Strontium Bismuth Tantalate Films SryBi2 +xTa2O9 on Structure and Electrophysical Properties
Kiselev, D. A., Kurteva, E. A., Semchenko, A. V., Boiko, A. A., Sudnik, L. V., Chucheva, G. V.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.05.2024)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.05.2024)
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Elemental Analysis of Materials by Methods of Ion-Beam Diagnostics
Afanasiev, M. S., Egorov, E. V., Egorov, V. K., Chucheva, G. V.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2021)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2021)
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Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements
Goldman, E. I., Kuharskaya, N. F., Levashov, S. A., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2019)
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Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
Goldman, E. I., Levashov, S. A., Naryshkina, V. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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FET on hydrogenated diamond surface
Gulyaev, Yu. V., Mityagin, A. Yu, Chucheva, G. V., Afanas’ev, M. S., Zyablyuk, K. N., Talipov, N. Kh, Nedosekin, P. G., Nabiev, A. E.
Published in Journal of communications technology & electronics (01.03.2014)
Published in Journal of communications technology & electronics (01.03.2014)
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