Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method
Li, Xueqin, Gao, Linchun, Ni, Tao, Zhou, Jingnan, Li, Xiaojing, Li, Yifan, Xu, Lida, Wang, Runjian, Zeng, Chuanbin, Li, Bo, Luo, Jiajun, Li, Jing
Published in Micromachines (Basel) (12.03.2023)
Published in Micromachines (Basel) (12.03.2023)
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Journal Article
Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs
Liu, Rui, Gao, Linchun, Wang, Juanjuan, Ni, Tao, Li, Yifan, Wang, Runjian, Li, Duoli, Bu, Jianhui, Zeng, Chuanbin, Li, Bo, Luo, Jiajun
Published in Micromachines (Basel) (04.03.2023)
Published in Micromachines (Basel) (04.03.2023)
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Journal Article
A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops
Duoli, Li, Chuanbin, Zeng, Wei, Dou, Linchun, Gao, Weiwei, Yan, Bo, Li, Yang, Huang, Tao, Liu, Long, Xing, Hainan, Liu, Jiajun, Luo, Zhengsheng, Han
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids
Li, Yangyang, Zhu, Huilong, Kong, Zhenzhen, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Wang, Qi, Liu, Ziyi, Lu, Shunshun, Xie, Lu, Huang, Weixing, Liu, Yongbo, Li, Chen, Li, Junjie, Lin, Hongxiao, Su, Jiale, Zeng, Chuanbin, Radamson, Henry H.
Published in Nanomaterials (Basel, Switzerland) (03.05.2021)
Published in Nanomaterials (Basel, Switzerland) (03.05.2021)
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Journal Article
Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing
Jinshun Bi, Chuanbin Zeng, Linchun Gao, Duoli Li, Gang Liu, Jiajun Luo, Zhengsheng Han, Zhengshen Han
Published in 2014 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2014)
Published in 2014 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2014)
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Conference Proceeding
55 nm CMOS Mixed-Signal Neuromorphic Circuits for Constructing Energy-Efficient Reconfigurable SNNs
Quan, Jiale, Liu, Zhen, Li, Bo, Zeng, Chuanbin, Luo, Jiajun
Published in Electronics (Basel) (01.10.2023)
Published in Electronics (Basel) (01.10.2023)
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Journal Article
Design of compact-diode-SCR with low-trigger voltage for full-chip ESD protection
Gao, Yuexin, Cai, Xiaowu, Han, Zhengsheng, Zeng, Chuanbin, Xia, Ruirui, Tang, Yun, Gao, Mali, Li, Bo
Published in Microelectronics and reliability (01.01.2023)
Published in Microelectronics and reliability (01.01.2023)
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Journal Article
TID Effect of MOSFETs in SOI BCD Process and Its Hardening Technique
Wang, Shiping, Li, Xiaojing, Cai, Xiaowu, Li, Duoli, Jin, Meichen, Lu, Peng, Zhu, Huiping, Zeng, Chuanbin, Tang, Yun, Xia, Ruirui, Wang, Lei, Li, Bo
Published in IEEE transactions on nuclear science (01.08.2023)
Published in IEEE transactions on nuclear science (01.08.2023)
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Journal Article
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection
Xia, Ruirui, Cai, Xiaowu, Ding, Liqiang, Zeng, Chuanbin, Gao, Yuexin, Li, Mingzhu, Wang, Shiping, Li, Bo, Zhao, Fazhan
Published in Solid-state electronics (01.04.2022)
Published in Solid-state electronics (01.04.2022)
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Journal Article
Single-event burnout of LDMOS with polygon P+ structure
Wang, Shiping, Cai, Xiaowu, Li, Xiaojing, Li, Duoli, Zeng, Chuanbin, Jin, Meichen, Wang, Jiajia, Li, Jiangjiang, Zhao, Fazhan, Li, Bo
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Journal Article
Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method
Li, Xiaojing, Zeng, Chuanbin, Wang, Ruiheng, Gao, Linchun, Yan, Weiwei, Luo, Jiajun, Han, Zhengsheng
Published in Applied physics. A, Materials science & processing (01.09.2018)
Published in Applied physics. A, Materials science & processing (01.09.2018)
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Journal Article
High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model
Xu, Lida, Gao, Linchun, Ni, Tao, Wang, Juanjuan, Cao, Zewen, Li, Yifan, Li, Xueqin, Wang, Runjian, Li, Xiaojing, Yan, Weiwei, Bu, Jianhui, Li, Duoli, Zeng, Chuanbin, Li, Bo, Luo, Jiajun
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Journal Article
Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement
Li, Yifan, Ni, Tao, Wang, Juanjuan, Gao, Linchun, Li, Xiaojing, Li, Jiangjiang, Bu, Jianhui, Li, Duoli, Xu, Lida, Wang, Runjian, Zeng, Chuanbin, Wang, Zhijie, Li, Bo, Zhao, Fazhan, Luo, Jiajun
Published in IEEE transactions on electron devices (01.10.2022)
Published in IEEE transactions on electron devices (01.10.2022)
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Journal Article
A transient ionizing radiation SPICE model for PDSOI MOSFET
Gao, Libo, Du, Chuanhua, Bu, Jianhui, Li, Jiangjiang, Ma, Quangang, Zhao, Fazhan, Zeng, Chao, Gao, Jiantou, Li, Duoli, Zeng, Chuanbin, Han, Zhengsheng, Luo, Jiajun
Published in Microwave and optical technology letters (01.08.2021)
Published in Microwave and optical technology letters (01.08.2021)
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Journal Article
The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
Li, Mingzhu, Cai, Xiaowu, Zeng, Chuanbin, Li, Xiaojing, Ni, Tao, Wang, Juanjuan, Li, Duoli, Zhao, Fazhan, Han, Zhengsheng
Published in Electronics (Basel) (01.02.2022)
Published in Electronics (Basel) (01.02.2022)
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Journal Article
Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions
Li, Yangyang, Zeng, Chuanbin, Li, Xiaojing, Gao, Linchun, Yan, Weiwei, Li, Duoli, Zhang, Yi, Han, Zhengsheng, Luo, Jiajun
Published in Electronics (Basel) (01.04.2021)
Published in Electronics (Basel) (01.04.2021)
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Journal Article