III-V field effect transistors for future ultra-low power applications
Dewey, G., Chu-Kung, B., Kotlyar, R., Metz, M., Mukherjee, N., Radosavljevic, M.
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications
Rachmady, W., Jun, K., Krist, B., Metz, M., Michaelos, T., Mueller, B., Oni, A. A., Paul, R., Phan, A., Sears, P., Talukdar, T., Agrawal, A., Torres, J., Turkot, R., Wong, L., Yoo, H. J., Kavalieros, J., Sung, S.H., Dewey, G., Chouksey, S., Chu-Kung, B., Elbaz, G., Fischer, P., Huang, C. Y.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture
Pillarisetty, R, Chu-Kung, B, Corcoran, S, Dewey, G, Kavalieros, J, Kennel, H, Kotlyar, R, Le, V, Lionberger, D, Metz, M, Mukherjee, N, Nah, J, Rachmady, W, Radosavljevic, M, Shah, U, Taft, S, Then, H, Zelick, N, Chau, R
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications
Radosavljevic, M, Dewey, G, Fastenau, J M, Kavalieros, J, Kotlyar, R, Chu-Kung, B, Liu, W K, Lubyshev, D, Metz, M, Millard, K, Mukherjee, N, Pan, L, Pillarisetty, R, Rachmady, W, Shah, U, Chau, R
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Fabrication, characterization, and physics of III-V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
Dewey, G., Chu-Kung, B., Boardman, J., Fastenau, J. M., Kavalieros, J., Kotlyar, R., Liu, W. K., Lubyshev, D., Metz, M., Mukherjee, N., Oakey, P., Pillarisetty, R., Radosavljevic, M., Then, H. W., Chau, R.
Published in 2011 International Electron Devices Meeting (01.01.2011)
Published in 2011 International Electron Devices Meeting (01.01.2011)
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Conference Proceeding
Experimental observation and physics of "negative" capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate
Then, H. W., Dasgupta, S., Radosavljevic, M., Chow, L., Chu-Kung, B., Dewey, G., Gardner, S., Gao, X., Kavalieros, J., Mukherjee, N., Metz, M., Oliver, M., Pillarisetty, R., Rao, V., Sung, S. H., Yang, G., Chau, R.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
MOVPE III-V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications
Mukherjee, N., Boardman, J., Chu-Kung, B., Dewey, G., Eisenbach, A., Fastenau, J., Kavalieros, J., Liu, W. K., Lubyshev, D., Metz, M., Millard, K., Radosavljevic, M., Stewart, T., Then, H. W., Tolchinsky, P., Chau, R.
Published in 2011 International Electron Devices Meeting (01.12.2011)
Published in 2011 International Electron Devices Meeting (01.12.2011)
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Conference Proceeding
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
Radosavljevic, M., Chu-Kung, B., Corcoran, S., Dewey, G., Hudait, M.K., Fastenau, J.M., Kavalieros, J., Liu, W.K., Lubyshev, D., Metz, M., Millard, K., Mukherjee, N., Rachmady, W., Shah, U., Chau, R.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation
Radosavljevic, M., Dewey, G., Basu, D., Boardman, J., Chu-Kung, B., Fastenau, J. M., Kabehie, S., Kavalieros, J., Le, V., Liu, W. K., Lubyshev, D., Metz, M., Millard, K., Mukherjee, N., Pan, L., Pillarisetty, R., Rachmady, W., Shah, U., Then, H. W., Chau, R.
Published in 2011 International Electron Devices Meeting (01.12.2011)
Published in 2011 International Electron Devices Meeting (01.12.2011)
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Conference Proceeding
Experimental observation and physics of "negative" capacitance and steeper than 40mV/decade subthreshold swing in Al sub(0.83)In sub(0.17)N/AlN/GaN MOS-HEMT on SiC substrate
Then, H W, Dasgupta, S, Radosavljevic, M, Chow, L, Chu-Kung, B, Dewey, G, Gardner, S, Gao, X, Kavalieros, J, Mukherjee, N, Metz, M, Oliver, M, Pillarisetty, R, Rao, V, Sung, SH, Yang, G, Chau, R
Published in Technical digest - International Electron Devices Meeting (01.12.2013)
Published in Technical digest - International Electron Devices Meeting (01.12.2013)
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Journal Article
APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE
BENJAMIN CHU-KUNG B, MANTU HUDAIT M, BEEN-YIH JIN B-Y, ROBERT CHAU R, RAVI PILLARISETTY R
Year of Publication 12.10.2012
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Year of Publication 12.10.2012
Patent
GERMANIUM-BASED QUANTUM WELL DEVICES
KAVALIEROS, JACK T. JT, RADOSAVLJEVIC, MARKO M, DEWEY, GILBERT G, CHU-KUNG, BENJAMIN B, KOTLYAR, ROZA R, PILLARISETTY, RAVI R, JIN, BEEN-YIH B-Y, CHAU, ROBERT R, METZ, MATTHEW V. MV, MUKHERJEE, NILOY N, RACHMADY, WILLY W
Year of Publication 20.11.2015
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Year of Publication 20.11.2015
Patent