Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
Zhuo-Rui Wang, Yu-Ting Su, Yi Li, Ya-Xiong Zhou, Tian-Jian Chu, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Sze, Simon M., Xiang-Shui Miao
Published in IEEE electron device letters (01.02.2017)
Published in IEEE electron device letters (01.02.2017)
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Journal Article
Physical and chemical mechanisms in oxide-based resistance random access memory
Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Published in Nanoscale research letters (12.03.2015)
Published in Nanoscale research letters (12.03.2015)
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Journal Article
Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
Po-Hsun Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Ikai Lo, Jin-Cheng Zheng, Sze, Simon M.
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Hsing-Hua Wu, Jung-Hui Chen, Kuan-Chang Chang, Tai-Fa Young, Kai-Hsang Chen, Yong-En Syu, Geng-Wei Chang, Yao-Feng Chang, Min-Chen Chen, Jyun-Hao Lou, Jhih-Hong Pan, Jian-Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, Sze, Simon M.
Published in IEEE electron device letters (01.04.2013)
Published in IEEE electron device letters (01.04.2013)
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Journal Article
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
Chih-Hung Pan, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Tian-Jian Chu, Chih-Cheng Shih, Chih-Yang Lin, Po-Hsun Chen, Huaqiang Wu, Ning Deng, He Qian, Sze, Simon M.
Published in IEEE transactions on electron devices (01.12.2016)
Published in IEEE transactions on electron devices (01.12.2016)
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Journal Article
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Hsing-Hua Wu, Jung-Hui Chen, Yong-En Syu, Geng-Wei Chang, Tian-Jian Chu, Guan-Ru Liu, Yu-Ting Su, Min-Chen Chen, Jhih-Hong Pan, Jian-Yu Chen, Cheng-Wei Tung, Hui-Chun Huang, Ya-Hsiang Tai, Der-Shin Gan, Sze, S. M.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
Shih, Chih-Cheng, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Chen, Jung-Hui, Chen, Kai-Huang, Young, Tai-Fa, Chen, Hsin-Lu, Lou, Jen-Chung, Chu, Tian-Jian, Huang, Syuan-Yong, Bao, Ding-Hua, Sze, Simon M.
Published in IEEE electron device letters (01.06.2014)
Published in IEEE electron device letters (01.06.2014)
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Journal Article
Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Kai-Huang Chen, Rui Zhang, Zhi-Yang Wang, Jung-Hui Chen, Tai-Fa Young, Min-Chen Chen, Tian-Jian Chu, Syuan-Yong Huang, Yong-En Syu, Ding-Hua Bao, Sze, Simon M.
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Chen, Min-Chen, Yang, Ya-Liang, Pan, Yin-Chih, Chang, Geng-Wei, Chu, Tian-Jian, Shih, Chih-Cheng, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tai, Ya-Hsiang, Sze, Simon M.
Published in IEEE electron device letters (01.05.2013)
Published in IEEE electron device letters (01.05.2013)
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Journal Article
An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
Wei Zhang, Ying Hu, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Hsin-Lu Chen, Yu-Ting Su, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Wan-Ching Su, Jin-Cheng Zheng, Ya-Chi Hung, Sze, Simon M.
Published in IEEE electron device letters (01.08.2015)
Published in IEEE electron device letters (01.08.2015)
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Journal Article
A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory
Su, Yu-Ting, Wang, Min-Chuan, Zhang, Shengdong, Wang, Hao, Sze, Simon M., Liu, Hsi-Wen, Chen, Po-Hsun, Chang, Ting-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Pan, Chih-Hung, Wu, Cheng-Hsien, Yang, Chih-Cheng
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory
Chih-Cheng Shih, Wen-Jen Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Yi-Ting Tseng, Cheng-Hsien Wu, Wan-Ching Su, Min-Chen Chen, Hui-Chun Huang, Ming-Hui Wang, Jung-Hui Chen, Jin-Cheng Zheng, Sze, Simon M.
Published in IEEE electron device letters (01.10.2016)
Published in IEEE electron device letters (01.10.2016)
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Journal Article
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
Ji Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Rui Zhang, Jen-Chung Lou, Tian-Jian Chu, Cheng-Hsien Wu, Min-Chen Chen, Ya-Chi Hung, Yong-En Syu, Jin-Cheng Zheng, Sze, Simon M.
Published in IEEE electron device letters (01.11.2015)
Published in IEEE electron device letters (01.11.2015)
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Journal Article
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Published in Nanoscale research letters (29.01.2014)
Published in Nanoscale research letters (29.01.2014)
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Journal Article
Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
Wu, Cheng-Hsien, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Pan, Chih-Hung, Su, Yu-Ting, Chen, Po-Hsun, Lin, Shih-Kai, Hu, Shih-Jie, Sze, Simon M.
Published in Applied physics express (01.05.2017)
Published in Applied physics express (01.05.2017)
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Journal Article
Resistance random access memory
Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Sze, Simon M.
Published in Materials today (Kidlington, England) (01.06.2016)
Published in Materials today (Kidlington, England) (01.06.2016)
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Journal Article
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
Tian-Jian Chu, Tsung-Ming Tsai, Ting-Chang Chang, Kuan-Chang Chang, Rui Zhang, Kai-Huang Chen, Jung-Hui Chen, Tai-Fa Young, Jen-Wei Huang, Jen-Chung Lou, Min-Chen Chen, Syuan-Yong Huang, Hsin-Lu Chen, Yong-En Syu, Dinghua Bao, Life, Simon M.
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Journal Article
Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
Su, Yu-Ting, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Hsin-Lu, Chen, Min-Chen, Yang, Chih-Cheng, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.
Published in Japanese Journal of Applied Physics (01.01.2017)
Published in Japanese Journal of Applied Physics (01.01.2017)
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Journal Article
Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory
Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Po-Hsun, Chen, Min-Chen, Sze, Simon M.
Published in Applied physics express (01.10.2016)
Published in Applied physics express (01.10.2016)
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Journal Article
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
Wu, Cheng-Hsien, Pan, Chih-Hung, Chen, Po-Hsun, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Shih, Chih-Cheng, Chi, Ting-Yang, Chu, Tian-Jian, Wu, Jia-Ji, Du, Xiaoqin, Zheng, Hao-Xuan, Sze, Simon M.
Published in Applied physics express (01.09.2017)
Published in Applied physics express (01.09.2017)
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Journal Article