Supplier selection for outsourcing from the perspective of protecting crucial product knowledge
Wu, F., Li, H.Z., Chu, L.K., Sculli, D.
Published in International journal of production research (01.03.2013)
Published in International journal of production research (01.03.2013)
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Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
Fu, C.H., Lin, Y.H., Lee, W.C., Lin, T.D., Chu, R.L., Chu, L.K., Chang, P., Chen, M.H., Hsueh, W.J., Chen, S.H., Brown, G.J., Chyi, J.I., Kwo, J., Hong, M.
Published in Microelectronic engineering (01.11.2015)
Published in Microelectronic engineering (01.11.2015)
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Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers
Chu, L.K., Chu, R.L., Lin, T.D., Lee, W.C., Lin, C.A., Huang, M.L., Lee, Y.J., Kwo, J., Hong, M.
Published in Solid-state electronics (01.09.2010)
Published in Solid-state electronics (01.09.2010)
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Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
CHU, L. K, LEE, W. C, HUANG, M. L, CHANG, Y. H, TUNG, L. T, CHANG, C. C, LEE, Y. J, KWO, J, HONG, M
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Ge metal-oxide-semiconductor devices with Al 2O 3/Ga 2O 3(Gd 2O 3) as gate dielectric
Chu, L.K., Chiang, T.H., Lin, T.D., Lee, Y.J., Chu, R.L., Kwo, J., Hong, M.
Published in Microelectronic engineering (01.03.2012)
Published in Microelectronic engineering (01.03.2012)
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Journal Article
Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium
Lee, W.C., Chin, B.H., Chu, L.K., Lin, T.D., Lee, Y.J., Tung, L.T., Lee, C.H., Hong, M., Kwo, J.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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InGaAs and Ge MOSFETs with high κ dielectrics
Lee, W.C., Chang, P., Lin, T.D., Chu, L.K., Chiu, H.C., Kwo, J., Hong, M.
Published in Microelectronic engineering (01.04.2011)
Published in Microelectronic engineering (01.04.2011)
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Conference Proceeding
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
CHU, L. K, CHIANG, T. H, LIN, T. D, LEE, Y. J, CHU, R. L, KWO, J, HONG, M
Published in Microelectronic engineering (01.03.2012)
Published in Microelectronic engineering (01.03.2012)
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Journal Article
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2O 3 on Ge
Chu, L.K., Lee, W.C., Huang, M.L., Chang, Y.H., Tung, L.T., Chang, C.C., Lee, Y.J., Kwo, J., Hong, M.
Published in Journal of crystal growth (2009)
Published in Journal of crystal growth (2009)
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Journal Article
Molecular beam epitaxy-grown Al 2O 3/HfO 2 high-κ dielectrics for germanium
Lee, W.C., Chin, B.H., Chu, L.K., Lin, T.D., Lee, Y.J., Tung, L.T., Lee, C.H., Hong, M., Kwo, J.
Published in Journal of crystal growth (2009)
Published in Journal of crystal growth (2009)
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Depletion-mode GaAs-based MOSFET with Ga 2O 3(Gd 2O 3) as a gate dielectric
Tsai, P.J., Chu, L.K., Chen, Y.W., Chiu, Y.N., Yang, H.P., Chang, P., Kwo, J., Chi, J., Hong, M.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric
TSAI, P. J, CHU, L. K, CHEN, Y. W, CHIU, Y. N, YANG, H. P, CHANG, P, KWO, J, CHI, J, HONG, M
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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Conference Proceeding
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High performance Ga2O3(Gd2O3)/Ge MOS devices without interfacial layers
Chu, L.K., Chu, R.L., Huang, M.L., Tung, L.T., Lin, T.D., Chang, C.C., Kwo, J., Hong, M.
Published in 2009 Proceedings of the European Solid State Device Research Conference (01.09.2009)
Published in 2009 Proceedings of the European Solid State Device Research Conference (01.09.2009)
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Conference Proceeding
Service availability of a radio access telecommunications network
CHU, L. K, CHU, S. S, SCULLI, D
Published in Quality and reliability engineering international (01.09.1998)
Published in Quality and reliability engineering international (01.09.1998)
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Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)
Chu, L.K., Lin, T.D., Lee, C.H., Tung, L.T., Lee, W.C., Chu, R.L., Chang, C.C., Hong, M., Kwo, J.
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
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Conference Proceeding
Effect of propofol on the electrocorticogram in epileptic patients undergoing cortical resection
Hewitt, P B, Chu, D L, Polkey, C E, Binnie, C D
Published in British journal of anaesthesia : BJA (01.02.1999)
Published in British journal of anaesthesia : BJA (01.02.1999)
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