Controllable valley splitting in silicon quantum devices
Goswami, Srijit, Slinker, K. A, Friesen, Mark, Eriksson, Mark A, McGuire, L. M, Truitt, J. L, Tahan, Charles, Klein, L. J, Chu, J. O, Mooney, P. M, van der Weide, D. W, Joynt, Robert, Coppersmith, S. N
Published in Nature physics (01.01.2007)
Published in Nature physics (01.01.2007)
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High-speed Germanium-on-SOI lateral PIN photodiodes
Dehlinger, G., Koester, S.J., Schaub, J.D., Chu, J.O., Ouyang, Q.C., Grill, A.
Published in IEEE photonics technology letters (01.11.2004)
Published in IEEE photonics technology letters (01.11.2004)
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Germanium channel MOSFETs: Opportunities and challenges
Shang, H., Frank, M. M., Gusev, E. P., Chu, J. O., Bedell, S. W., Guarini, K. W., Ieong, M.
Published in IBM journal of research and development (01.07.2006)
Published in IBM journal of research and development (01.07.2006)
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Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
Slinker, K A, Lewis, K L M, Haselby, C C, Goswami, S, Klein, L J, Chu, J O, Coppersmith, S N, Joynt, Robert, Blick, R H, Friesen, Mark, Eriksson, M A
Published in New journal of physics (29.11.2005)
Published in New journal of physics (29.11.2005)
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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS
Published in Physical review letters (19.12.1994)
Published in Physical review letters (19.12.1994)
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Journal Article
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
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Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications
Koester, S.J., Schaub, J.D., Dehlinger, G., Chu, J.O.
Published in IEEE journal of selected topics in quantum electronics (01.11.2006)
Published in IEEE journal of selected topics in quantum electronics (01.11.2006)
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Nucleation of dislocations in SiGe layers grown on (001)Si
Mooney, P. M., LeGoues, F. K., Tersoff, J., Chu, J. O.
Published in Journal of applied physics (15.04.1994)
Published in Journal of applied physics (15.04.1994)
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Journal Article
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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Journal Article
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
Mooney, P.M., Rim, K., Christiansen, S.H., Chan, K.K., Chu, J.O., Cai, J., Chen, H., Jordan-Sweet, J.L., Yang, Y.Y., Boyd, D.C.
Published in Solid-state electronics (01.10.2005)
Published in Solid-state electronics (01.10.2005)
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Journal Article
High speed p-type SiGe modulation-doped field-effect transistors
Arafa, M., Fay, P., Ismail, K., Chu, J.O., Meyerson, B.S., Adesida, I.
Published in IEEE electron device letters (01.03.1996)
Published in IEEE electron device letters (01.03.1996)
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Journal Article
Spin-Based Quantum Dot Quantum Computing in Silicon
Eriksson, Mark A., Friesen, Mark, Coppersmith, Susan N., Joynt, Robert, Klein, Levente J., Slinker, Keith, Tahan, Charles, Mooney, P. M., Chu, J. O., Koester, S. J.
Published in Quantum information processing (01.10.2004)
Published in Quantum information processing (01.10.2004)
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Journal Article
DC and RF performance of 0.25 μm p-type SiGe MODFET
Arafa, M., Fay, P., Ismail, K., Chu, J.O., Meyerson, B.S., Adesida, I.
Published in IEEE electron device letters (01.09.1996)
Published in IEEE electron device letters (01.09.1996)
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Journal Article
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
Lu, W., Wang, X.W., Hammond, R., Kuliev, A., Koester, S., Chu, J.O., Ismail, K., Ma, T.P., Adesida, I.
Published in IEEE electron device letters (01.10.1999)
Published in IEEE electron device letters (01.10.1999)
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Journal Article
SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
Li, P.W., Yang, E.S., Yang, Y.F., Chu, J.O., Meyerson, B.S.
Published in IEEE electron device letters (01.10.1994)
Published in IEEE electron device letters (01.10.1994)
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