Application of high-resolution X-ray diffraction to study strain status in Si1−Ge /Si1−Ge /Si (001) heterostructures
Chtcherbatchev, K.D., Sequeira, A.D., Franco, N., Barradas, N.P., Myronov, M., Mironov, O.A., Parker, E.H.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.2002)
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Journal Article
Application of high-resolution X-ray diffraction to study strain status in Si 1− xGe x/Si 1− yGe y/Si (001) heterostructures
Chtcherbatchev, K.D., Sequeira, A.D., Franco, N., Barradas, N.P., Myronov, M., Mironov, O.A., Parker, E.H.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2002)
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Journal Article
Structural analysis of buried conducting CoSi 2 layers formed in Si by high-dose Co ion implantation
Galayev, A.A, Parkhomenko, Yu.N, Chtcherbatchev, K.D, Podgorny, D.A, Belogorohov, A.I, Diéguez, A, Romano-Rodriguez, A, Pérez-Rodrı́guez, A, Morante, J.R
Published in Journal of crystal growth (1998)
Published in Journal of crystal growth (1998)
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Journal Article
Point Defect Clusters in Pb1−xInxTe Single Crystals Revealed by X-ray Diffuse Scattering Method
Zlomanov, V.P., Chtcherbatchev, K.D., Tkalich, A.K.
Published in Journal of solid state chemistry (01.04.1998)
Published in Journal of solid state chemistry (01.04.1998)
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Journal Article
Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)16 superlattices
MIRONOV, O. A, FULGONI, D. J. F, MORANTE, J. R, PARRY, C. P, COOKE, G. A, DOWSETT, M. G, PARKER, E. H. C, CHTCHERBATCHEV, K. D, BASSAS, J. M, ROMANO-RODRIGUEZ, A, PEREZ-RODRIGUEZ, A
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Conference Proceeding
Journal Article
Structural analysis of buried conducting CoSi2 layers formed in Si by high-dose Co ion implantation
Galayev, A.A, Parkhomenko, Yu.N, Chtcherbatchev, K.D, Podgorny, D.A, Belogorohov, A.I, Diéguez, A, Romano-Rodriguez, A, Pérez-Rodrı́guez, A, Morante, J.R
Published in Journal of crystal growth (01.05.1998)
Published in Journal of crystal growth (01.05.1998)
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Journal Article