Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
Jungwoo Joh, del Alamo, J.A., Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
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Journal Article
Physical degradation of GaN HEMT devices under high drain bias reliability testing
Park, S.Y., Floresca, Carlo, Chowdhury, Uttiya, Jimenez, Jose L., Lee, Cathy, Beam, Edward, Saunier, Paul, Balistreri, Tony, Kim, Moon J.
Published in Microelectronics and reliability (01.05.2009)
Published in Microelectronics and reliability (01.05.2009)
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Conference Proceeding
High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer
CHOWDHURY, Uttiya, WONG, Michael M, COLLINS, Charles J, BO YANG, DENYSZYN, Jonathan C, CAMPBELL, Joe C, DUPUIS, Russell D
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Conference Proceeding
Journal Article
Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier
Wong, Michael M., Chowdhury, Uttiya, Sicault, Delphine, Becher, David T., Denyszyn, Jonathan C., Choi, Jin Ho, Zhu, Ting Gang, Feng, Milton, Dupuis, Russell D.
Published in Japanese Journal of Applied Physics (01.04.2003)
Published in Japanese Journal of Applied Physics (01.04.2003)
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Journal Article
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Seong-Yong Park, Taehun Lee, Wang, J., Kim, M.J., Jungwoo Joh, del Alamo, J.A.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article
Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors
Jungwoo Joh, Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.
Published in 2007 ROCS Workshop[Reliability of Compound Semiconductors Digest] (01.10.2007)
Published in 2007 ROCS Workshop[Reliability of Compound Semiconductors Digest] (01.10.2007)
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Conference Proceeding
The role of surface barrier oxidation on AIGaN/GaN HEMTs reliability
TAPAJNA, Milan, KILLAT, Nicole, CHOWDHURY, Uttiya, JIMENEZ, Jose L, KUBALL, Martin
Published in Microelectronics and reliability (2012)
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Published in Microelectronics and reliability (2012)
Conference Proceeding
Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz
Hampson, M.D., Shyh-Chiang Shen, Schwindt, R.S., Price, R.K., Chowdhury, U., Wong, M.M., Ting Gang Zhu, Dongwon Yoo, Dupuis, R.D., Milton Feng
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Journal Article
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Shelton, B.S., Lambert, D.J.H., Jian Jang Huang, Wong, M.M., Chowdhury, U., Ting Gang Zhu, Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.
Published in IEEE transactions on electron devices (01.03.2001)
Published in IEEE transactions on electron devices (01.03.2001)
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Journal Article
Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs
Chowdhury, Uttiya, Price, Raymond K., Wong, Michael M., Yoo, Dongwon, Zhang, Xuebing, Feng, Milton, Dupuis, Russell D.
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Journal Article
Conference Proceeding