High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal
Li, Z., Waldron, J., Chowdhury, S., Zhao, L., Detchprohm, T., Wetzel, C., Karlicek Jr, R. F., Chow, T. P.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
SiC power Schottky and PiN diodes
Singh, R., Cooper, J.A., Melloch, M.R., Chow, T.P., Palmour, J.W.
Published in IEEE transactions on electron devices (01.04.2002)
Published in IEEE transactions on electron devices (01.04.2002)
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Journal Article
Experimental demonstration of enhancement mode GaN MOSFETs
Huang, W., Chow, T. P., Khan, T.
Published in Physica status solidi. A, Applications and materials science (01.06.2007)
Published in Physica status solidi. A, Applications and materials science (01.06.2007)
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Journal Article
Conference Proceeding
AlGaN devices and growth of device structures
Jones, K. A., Chow, T. P., Wraback, M., Shatalov, M., Sitar, Z., Shahedipour, F., Udwary, K., Tompa, G. S.
Published in Journal of materials science (01.05.2015)
Published in Journal of materials science (01.05.2015)
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Journal Article
High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact
Sharma, S., Li, C., Bhat, I.B., Chow, T.P.
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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Journal Article
4 kV 4H-SiC epitaxial emitter bipolar junction transistors
Balachandran, S., Chow, T.P., Agarwal, A., Scozzie, C., Jones, K.A.
Published in IEEE electron device letters (01.07.2005)
Published in IEEE electron device letters (01.07.2005)
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Journal Article
Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching
He, Z., Torky, M., Ghandi, R., Hitchcock, C. W., Kennerly, S., Chow, T. P.
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics
Xiao, Y., Shah, H., Chow, T.P., Gutmann, R.J.
Published in Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04 (2004)
Published in Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04 (2004)
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Conference Proceeding
Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs
Chowdhury, S., Chow, T. P.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition
Ramaiah, Kodigala Subba, Bhat, I., Chow, T.P., Kim, J.K., Schubert, E.F., Johnstone, D.
Published in Physica. B, Condensed matter (15.03.2007)
Published in Physica. B, Condensed matter (15.03.2007)
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Rapid, high-level expression of biologically active alpha-trichosanthin in transfected plants by an RNA viral vector
Kumagai, M.H. (Biosource Genetics Corp., Vacaville, CA), Turpen, T.H, Weinzettl, N, Della-Cioppa, G, Turpen, A.M, Donson, J, Hilf, M.E, Grantham, G.L, Dawson, W.O, Chow, T.P
Published in Proceedings of the National Academy of Sciences - PNAS (15.01.1993)
Published in Proceedings of the National Academy of Sciences - PNAS (15.01.1993)
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