Gadolinium-based metal oxide for nonvolatile memory applications
Wang, Jer-Chyi, Lin, Chih-Ting, Chou, Pai-Chi, Lai, Chao-Sung
Published in Microelectronics and reliability (01.04.2012)
Published in Microelectronics and reliability (01.04.2012)
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Journal Article
Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With \hbox \hbox Gate Dielectrics
Wang, Jer-Chyi, Peng, Hsing-Kan, Lai, Chao-Sung, Chou, Pai-Chi, Lee, Min-Jer
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory
Lai, Chao-Sung, Wang, Jer-Chyi, Chang, Li-Chun, Liao, Yi-Kai, Chou, Pai-Chi, Chang, Wei-Cheng, Ai, Chi-Fong, Tsai, Wen-Fa
Published in Solid-state electronics (01.11.2012)
Published in Solid-state electronics (01.11.2012)
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Conference Proceeding
Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 plasma passivation
Woei-Cherng Wu, Chao-Sung Lai, Huai-Hsien Chiu, Jer-Chyi Wang, Pai-Chi Chou, Tien-Sheng Chao
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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Conference Proceeding
Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With hbox Gd 2 hbox O 3 Gate Dielectrics
Wang, Jer-Chyi, Peng, Hsing-Kan, Lai, Chao-Sung, Chou, Pai-Chi, Lee, Min-Jer
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With Gd2O3 Gate Dielectrics
WANG, Jer-Chyi, PENG, Hsing-Kan, LAI, Chao-Sung, CHOU, Pai-Chi, LEE, Min-Jer
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With [Formula Omitted] Gate Dielectrics
Wang, Jer-Chyi, Peng, Hsing-Kan, Lai, Chao-Sung, Chou, Pai-Chi, Lee, Min-Jer
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Fluorinated HfO2 gate dielectrics engineering for CMOS by pre- and post-CF4 plasma passivation
Woei-Cherng Wu, Chao-Sung Lai, Shih-Ching Lee, Ming-Wen Ma, Tien-Sheng Chao, Jer-Chyi Wang, Chih-Wei Hsu, Pai-Chi Chou, Jian-Hao Chen, Kuo-Hsing Kao, Wen-Cheng Lo, Tsung-Yi Lu, Li-Lin Tay, Rowell, N.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
Characteristics optimization of N sub(2)O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application
Wang, Jer-Chyi, Chou, Pai-Chi, Lai, Chao-Sung, Lee, Wen-Hui, Ai, Chi-Fong
Published in Microelectronics and reliability (01.05.2010)
Published in Microelectronics and reliability (01.05.2010)
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Journal Article
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application: 2009 International Electron Devices and Materials Symposium (IEDMS)
WANG, Jer-Chyi, CHOU, Pai-Chi, LAI, Chao-Sung, LEE, Wen-Hui, AI, Chi-Fong
Published in Microelectronics and reliability (2010)
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Published in Microelectronics and reliability (2010)
Journal Article
High-k Hf x Gd y O z Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
Chou, Pai-Chi, Lai, Chao-Sung, Wang, Jer-Chyi, Wu, Woei-Cherng, Liu, Li-Chi, Fang, Yu-Ching, Hsu, Li, Wang, Hui-Chun
Published in Japanese Journal of Applied Physics (01.05.2009)
Published in Japanese Journal of Applied Physics (01.05.2009)
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