Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
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Conference Proceeding
Schottky Barrier Height Modulation of Nickel-Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs
Sinha, M., Lee, R.T.P., Chor, E.F., Yee-Chia Yeo
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-gan
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Conference Proceeding
Journal Article
Enhancing leakage suppression in carbon-rich silicon junctions
Chung Foong Tan, Eng Fong Chor, Hyeokjae Lee, Quek, E., Lap Chan
Published in IEEE electron device letters (01.06.2006)
Published in IEEE electron device letters (01.06.2006)
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Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon
CHUNG FOONG TAN, ENG FONG CHOR, LEE, Hyeokjae, JINPING LIU, QUEK, Elgin, CHAI, Lap
Published in Thin solid films (10.05.2006)
Published in Thin solid films (10.05.2006)
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Conference Proceeding
Journal Article
Single silicide comprising Nickel-Dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by Aluminum implant
Sinha, M., Lee, R.T.P., Devi, S.N., Guo-Qiang Lo, Eng Fong Chor, Yee-Chia Yeo
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
Lau, Wai Shing, Chor, Eng Fong, Chee Seng Foo, Chee Seng Foo, Wai Chee Khoong, Wai Chee Khoong
Published in Japanese Journal of Applied Physics (1992)
Published in Japanese Journal of Applied Physics (1992)
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Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT
Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong
Published in Journal of physics. D, Applied physics (16.09.2015)
Published in Journal of physics. D, Applied physics (16.09.2015)
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