Atomic layer deposition of diisopropylaminosilane on WO3(001) and W(110): a density functional theory studyElectronic supplementary information (ESI) available. See DOI: 10.1039/c6cp05720a
Lee, Kyungtae, Lee, Woojin, Lee, Hyo Sug, Shin, Jaikwang, Park, Jieun, Lee, Seongsuk, Choi, Samjong, Kim, Sueryeon, Kim, Jinseong, Shim, Youngseon
Year of Publication 26.10.2016
Year of Publication 26.10.2016
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Journal Article
Atomic layer deposition of diisopropylaminosilane on WO 3 (001) and W(110): a density functional theory study
Lee, Kyungtae, Lee, Woojin, Lee, Hyo Sug, Shin, Jaikwang, Park, Jieun, Lee, Seongsuk, Choi, Samjong, Kim, Sueryeon, Kim, Jinseong, Shim, Youngseon
Published in Physical chemistry chemical physics : PCCP (26.10.2016)
Published in Physical chemistry chemical physics : PCCP (26.10.2016)
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Journal Article
Atomic layer deposition of diisopropylaminosilane on WO3(001) and W(110): a density functional theory study
Lee, Kyungtae, Lee, Woojin, Lee, Hyo Sug, Shin, Jaikwang, Park, Jieun, Lee, Seongsuk, Choi, Samjong, Kim, Sueryeon, Kim, Jinseong, Shim, Youngseon
Published in Physical chemistry chemical physics : PCCP (2016)
Published in Physical chemistry chemical physics : PCCP (2016)
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Journal Article
Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material
LEE, Hye-Ryoung, CHOI, Samjong, CHO, Kyoungah, KIM, Sangsig
Published in Thin solid films (03.12.2007)
Published in Thin solid films (03.12.2007)
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Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers
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Published in Solid state communications (01.09.2007)
Published in Solid state communications (01.09.2007)
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Choi, Samjong, Kim, Yehwan, Baek, Gayeong, Im, Hwon, Kim, Yeonsook, Kim, Euido, Kim, Cheongjun, Lee, Munkeun
Year of Publication 21.09.2023
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THINNER COMPOSITION AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE BY USING THE SAME
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Year of Publication 26.09.2024
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Year of Publication 26.09.2024
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Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material
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Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01.10.2006)
Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01.10.2006)
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Conference Proceeding