A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology
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Published in IEEE journal of solid-state circuits (01.01.2012)
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Release film and manufacturing method thereof
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Published in Optics communications (01.02.2004)
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Journal Article
A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology
Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Shon, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung
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Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
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