Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors
Kang, Yun‐Seong, Lee, Yeol‐Hyeong, Kim, Woo‐Sic, Cho, Yong‐Jung, Park, JeongKi, Kim, GeonTae, Kim, Ohyun
Published in Physica status solidi. A, Applications and materials science (20.02.2019)
Published in Physica status solidi. A, Applications and materials science (20.02.2019)
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Journal Article
Effect of illumination on the hump phenomenon in I–V characteristics of amorphous InGaZnO TFTs under positive gate‐bias stress
Cho, Yong‐Jung, Lee, Yeol‐Hyeong, Kim, Woo‐Sic, Kim, Byeong‐Koo, Park, Kyung Tae, Kim, Ohyun
Published in Physica status solidi. A, Applications and materials science (01.05.2017)
Published in Physica status solidi. A, Applications and materials science (01.05.2017)
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Journal Article
Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress
Kim, Woo-Sic, Lee, Yeol-Hyeong, Cho, Yong-Jung, Kim, Byeong-Koo, Park, Kyung Tae, Kim, Ohyun
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Journal Article
Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor
Lee, Yeol-Hyeong, Cho, Yong-Jung, Kim, Woo-Sic, Park, Jeong Ki, Kim, Geon Tae, Kim, Ohyun
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination
Cho, Yong-Jung, Kim, Woo-Sic, Lee, Yeol-Hyeong, Park, Jeong Ki, Kim, Geon Tae, Kim, Ohyun
Published in Solid-state electronics (01.06.2018)
Published in Solid-state electronics (01.06.2018)
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Journal Article
Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors
Ha, Tae-Kyoung, Kim, Yongjo, Cho, Yong-Jung, Kang, Yun-Seong, Yu, SangHee, Kim, GwangTae, Jeong, Hoon, Park, Jeong Ki, Kim, Ohyun
Published in Solid-state electronics (01.03.2020)
Published in Solid-state electronics (01.03.2020)
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Journal Article
Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress
Kim, Yongjo, Ha, Tae-Kyoung, Cho, Yong-Jung, Kang, Yun-Seong, Yu, SangHee, Kim, GwangTae, Jeong, Hun, Park, Jeong Ki, Kim, Ohyun
Published in Solid-state electronics (01.05.2020)
Published in Solid-state electronics (01.05.2020)
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Journal Article
Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors
Kim, Woo-Sic, Cho, Yong-Jung, Lee, Yeol-Hyeong, Park, JeongKi, Kim, GeonTae, Kim, Ohyun
Published in Solid-state electronics (01.11.2017)
Published in Solid-state electronics (01.11.2017)
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Journal Article
Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
Kim, Woo-Sic, Kang, Yun-Seong, Cho, Yong-Jung, Park, JeongKi, Kim, GeonTae, Kim, Ohyun
Published in Solid-state electronics (01.02.2019)
Published in Solid-state electronics (01.02.2019)
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