Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Pan, Jisheng, Ivana, Zhang, Zheng, Hu, Hailong, Xiang Shen, Ze, Kean Chia, Ching, Yeo, Yee-Chia
Published in Journal of applied physics (07.03.2013)
Published in Journal of applied physics (07.03.2013)
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Journal Article
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III–V/Ge based device application
Kumar Dalapati, Goutam, Chakraborty, Sandipan, Mahata, Chandreswar, Amin Bhuiyan, Maruf, Dong, Jianrong, Iskander, Aneesa, Masudy-panah, Saied, Dinda, Sanghamitra, Bin Yang, Ren, Lee, Taeyoon, Chi, Dongzhi, Kean Chia, Ching
Published in Materials letters (01.10.2015)
Published in Materials letters (01.10.2015)
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Journal Article
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
Goh, Kian-Hui, Cheng, Yuanbing, Lu Low, Kain, Yu Jin Kong, Eugene, Chia, Ching-Kean, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Journal of applied physics (28.01.2013)
Published in Journal of applied physics (28.01.2013)
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Journal Article
Ge and GaAs integration for device applications
Ching-Kean Chia, Iskander, Aneesa, Yuanbing Cheng, Jin Yunjiang, Dalapati, Goutam Kumar, Qiuwei, Terry Zhuo
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
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Conference Proceeding
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10 degree offcut germanium-on-insulator substrate
Goh, Kian-Hui, Cheng, Yuanbing, Lu Low, Kain, Yu Jin Kong, Eugene, Chia, Ching-Kean, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Journal of applied physics (01.01.2013)
Published in Journal of applied physics (01.01.2013)
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Journal Article
Tunneling Field-Effect Transistor (TFET) with Novel Ge/In 0.53 Ga 0.47 As Tunneling Junction
Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Chia, Ching Kean, Yeo, Y. C.
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
Dalapati, Goutam Kumar, Shun Wong, Terence Kin, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
Published in Nanoscale research letters (02.02.2012)
Published in Nanoscale research letters (02.02.2012)
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Journal Article
Source/Drain Engineering for In 0.7 Ga 0.3 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Source/Drain Engineering for In 0.7 Ga 0.3 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Ivana, Zhu, Zhu, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia
Published in Jpn J Appl Phys (01.04.2011)
Published in Jpn J Appl Phys (01.04.2011)
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Journal Article
GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
Fei Gao, Lee, S.J., Rui Li, Whang, S.J., Balakumar, S., Chi, D.Z., Chia Ching Kean, Vicknesh, S., Tung, C.H., Kwong, D.-L.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
Introduction to the Special Issue on Photonic Materials and Devices
Chin, Mee-Koy, Chia, Ching-Kean, Pita, Kantisara, Teng, Jinghua, Ooi, Boon-Siew
Published in Journal of crystal growth (01.02.2006)
Published in Journal of crystal growth (01.02.2006)
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Journal Article