Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE
Ezzedini, M., Bouzidi, M., Qaid, M. M., Chine, Z., Rebey, A., Sfaxi, L.
Published in Journal of materials science. Materials in electronics (01.12.2017)
Published in Journal of materials science. Materials in electronics (01.12.2017)
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Journal Article
Photoreflectance investigation of exciton-acoustic phonon scattering in GaN grown by MOVPE
Bouzidi, M., Soltani, S., Halidou, I., Chine, Z., El Jani, B.
Published in Solid state sciences (01.04.2016)
Published in Solid state sciences (01.04.2016)
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Journal Article
Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy
Chine, Z., Fitouri, H., Zaied, I., Rebey, A., El Jani, B.
Published in Journal of crystal growth (01.09.2011)
Published in Journal of crystal growth (01.09.2011)
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Journal Article
Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037 alloy
Moussa, I, Fitouri, H, Chine, Z, Rebey, A, El Jani, B
Published in Semiconductor science and technology (01.12.2008)
Published in Semiconductor science and technology (01.12.2008)
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Journal Article
Stress and density of defects in Si-doped GaN
Chine, Z., Rebey, A., Touati, H., Goovaerts, E., Oueslati, M., Jani, B. El, Laugt, S.
Published in Physica status solidi. A, Applications and materials science (01.06.2006)
Published in Physica status solidi. A, Applications and materials science (01.06.2006)
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Journal Article
Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages
Bouzidi, M., Soltani, S., Chine, Z., Rebey, A., Shakfa, M.K.
Published in Optical materials (01.11.2017)
Published in Optical materials (01.11.2017)
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Journal Article
Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process
Chine, Z, Piriou, B, Oueslati, M, Boufaden, T, El Jani, B
Published in Journal of luminescence (01.07.1999)
Published in Journal of luminescence (01.07.1999)
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Journal Article
Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy
Soltani, S., Bouzidi, M., Chine, Z., Touré, A., Halidou, I., Jani, B. El, Shakfa, M.K.
Published in Thin solid films (01.05.2017)
Published in Thin solid films (01.05.2017)
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Journal Article
Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy
Fitouri, H., Chakir, K., Chine, Z., Rebey, A., El Jani, B.
Published in Materials letters (01.08.2015)
Published in Materials letters (01.08.2015)
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Journal Article
Effect of growth conditions on the Al composition and optical properties of AlxGa1−xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy
Soltani, S., Bouzidi, M., Chine, Z., Touré, A., Halidou, I., Jani, B. El, Shakfa, M.K.
Published in Thin solid films (30.05.2017)
Published in Thin solid films (30.05.2017)
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Journal Article
Photoluminescence of V-doped GaN thin films grown by MOVPE technique
Souissi, M., Chine, Z., Bchetnia, A., Touati, H., El Jani, B.
Published in Microelectronics (01.01.2006)
Published in Microelectronics (01.01.2006)
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Journal Article
Heavily silicon-doped GaN by MOVPE
Halidou, I, Benzarti, Z, Chine, Z, Boufaden, T, El Jani, B
Published in Microelectronics (01.02.2001)
Published in Microelectronics (01.02.2001)
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Journal Article
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs
Rebey, A., Chine, Z., Fathallah, W., El Jani, B., Goovaerts, E., Laugt, S.
Published in Microelectronics (01.11.2004)
Published in Microelectronics (01.11.2004)
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Journal Article
Effect of thermal annealing on structural and optical properties of the GaAs 0.963 Bi 0.037 alloy
Moussa, I, Fitouri, H, Chine, Z, Rebey, A, El Jani, B
Published in Semiconductor science and technology (01.12.2008)
Published in Semiconductor science and technology (01.12.2008)
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Journal Article
Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE
Bouzidi, M., Benzarti, Z., Halidou, I., Chine, Z., Bchetnia, A., El Jani, B.
Published in Superlattices and microstructures (01.08.2015)
Published in Superlattices and microstructures (01.08.2015)
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Journal Article