Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate
Bin Liu, Xiao Gong, Chunlei Zhan, Genquan Han, Hock-Chun Chin, Moh-Lung Ling, Jie Li, Yongdong Liu, Jiangtao Hu, Daval, N., Veytizou, C., Delprat, D., Bich-Yen Nguyen, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.06.2013)
Published in IEEE transactions on electron devices (01.06.2013)
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Journal Article
Silane-Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs
Chin, Hock-Chun, Zhu, Ming, Liu, Xinke, Lee, Hock-Koon, Shi, Luping, Tan, Leng-Seow, Yeo, Yee-Chia
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
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Journal Article
Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation
Hoong-Shing Wong, Koh, A.T.-Y., Hock-Chun Chin, Lap Chan, Samudra, G., Yee-Chia Yeo
Published in IEEE electron device letters (01.07.2008)
Published in IEEE electron device letters (01.07.2008)
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Journal Article
Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement
King-Jien Chui, Kah-Wee Ang, Hock-Chun Chin, Chen Shen, Lai-Yin Wong, Chih-Hang Tung, Balasubramanian, N., Ming Fu Li, Samudra, G.S., Yee-Chia Yeo
Published in IEEE electron device letters (01.09.2006)
Published in IEEE electron device letters (01.09.2006)
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Journal Article
Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions
Kah-Wee Ang, Hock-Chun Chin, King-Jien Chui, Ming-Fu Li, Ganesh Samudra, Yee-Chia Yeo
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
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Conference Proceeding
Silane and Ammonia Surface Passivation Technology for High-Mobility \hbox\hbox\hbox MOSFETs
Chin, Hock-Chun, Liu, Xinke, Gong, Xiao, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.05.2010)
Published in IEEE transactions on electron devices (01.05.2010)
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Journal Article
III-V Multiple-Gate Field-Effect Transistors With High-Mobility \hbox\hbox\hbox Channel and Epi-Controlled Retrograde-Doped Fin
Chin, Hock-Chun, Gong, Xiao, Wang, Lanxiang, Lee, Hock Koon, Shi, Luping, Yeo, Yee-Chia
Published in IEEE electron device letters (01.02.2011)
Published in IEEE electron device letters (01.02.2011)
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Journal Article
Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Ivana, Zhu, Zhu, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia
Published in Jpn J Appl Phys (01.04.2011)
Published in Jpn J Appl Phys (01.04.2011)
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Journal Article
Self-Aligned NiGeSi Contacts on Gallium Arsenide for III-V MOSFETs
Zhang, Xingui, Guo, Huaxin, Chin, Hock-Chun, Gong, Xiao, Lim, Phyllis Shi Ya, Yeo, Yee-Chia
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
Hock-Chun Chin, Xiao Gong, Xinke Liu, Zhe Lin, Yee-Chia Yeo
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
Ang, Kah-Wee, Chin, Hock-Chun, Chui, King-Jien, Li, Ming-Fu, Samudra, Ganesh S., Yeo, Yee-Chia
Published in Solid-state electronics (01.11.2007)
Published in Solid-state electronics (01.11.2007)
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Journal Article
Conference Proceeding
III-V MOSFETs with a new self-aligned contact
Zhang, Xingui, Guo, Huaxin, Ko, Chih-Hsin, Wann, Clement H., Cheng, Chao-Ching, Lin, Hau-Yu, Chin, Hock-Chun, Gong, Xiao, Lim, Phyllis Shi Ya, Luo, Guang-Li, Chang, Chun-Yen, Chien, Chao-Hsin, Han, Zong-You, Huang, Shih-Chiang, Yeo, Yee-Chia
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Semiconductor device and method for manufacturing the same
CHEON, KEON YONG, LEE, SANG HYUN, FUKAI TOSHINORI, MAEDA SHIGENOBU, PARK, SUNG IL, CHIN HOCK CHUN, HONG, BYOUNG HAK, MASUOKA SADA AKI
Year of Publication 09.02.2017
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Year of Publication 09.02.2017
Patent
A New Salicidation Process with Solid Antimony (Sb) Segregation (SSbS) for Achieving Sub-0.1 eV Effective Schottky Barrier Height and Parasitic Series Resistance Reduction in N-Channel Transistors
Hoong-Shing Wong, Koh, A.T.-Y., Hock-Chun Chin, Lee, R.T.-P., Lap Chan, Samudra, G., Yee-Chia Yeo
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
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Conference Proceeding