Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
Uedono, Akira, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun, Ishibashi, Shoji, Chichibu, Shigefusa F., Kachi, Tetsu
Published in Scientific reports (15.10.2020)
Published in Scientific reports (15.10.2020)
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Journal Article
Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in AlxGa1−xN films and multiple quantum wells grown by metalorganic vapor phase epitaxy
Chichibu, Shigefusa F, Miyake, Hideto, Uedono, Akira
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions
Schimmel, Saskia, Tomida, Daisuke, Ishiguro, Tohru, Honda, Yoshio, Chichibu, Shigefusa F, Amano, Hiroshi
Published in Materials (28.02.2023)
Published in Materials (28.02.2023)
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Journal Article
Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters
Chichibu, Shigefusa F., Kojima, Kazunobu, Uedono, Akira, Sato, Yoshitaka
Published in Advanced materials (Weinheim) (02.02.2017)
Published in Advanced materials (Weinheim) (02.02.2017)
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Journal Article
Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN
Chichibu, Shigefusa F., Shima, Kohei, Kojima, Kazunobu, Kangawa, Yoshihiro
Published in Scientific reports (29.10.2020)
Published in Scientific reports (29.10.2020)
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Journal Article
Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells
Nagasawa, Yosuke, Kojima, Kazunobu, Hirano, Akira, Ippommatsu, Masamichi, Honda, Yoshio, Amano, Hiroshi, Chichibu, Shigefusa F
Published in Journal of physics. D, Applied physics (23.06.2022)
Published in Journal of physics. D, Applied physics (23.06.2022)
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Journal Article
Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono, Akira, Takashima, Shinya, Edo, Masaharu, Ueno, Katsunori, Matsuyama, Hideaki, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji
Published in physica status solidi (b) (01.04.2018)
Published in physica status solidi (b) (01.04.2018)
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Journal Article
Facile method for the synthesis of zinc- or magnesium-doped gallium nitride powders from gallium metal
Tomida, Daisuke, Bao, Quanxi, Saito, Makoto, Kurimoto, Kouhei, Kojima, Kazunobu, Qiao, Kun, Ishiguro, Tohru, Chichibu, Shigefusa F.
Published in Journal of crystal growth (15.09.2021)
Published in Journal of crystal growth (15.09.2021)
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Journal Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
Uedono, Akira, Sakurai, Hideki, Uzuhashi, Jun, Narita, Tetsuo, Sierakowski, Kacper, Ishibashi, Shoji, Chichibu, Shigefusa F., Bockowski, Michal, Suda, Jun, Ohkubo, Tadakatsu, Ikarashi, Nobuyuki, Hono, Kazuhiro, Kachi, Tetsu
Published in physica status solidi (b) (01.10.2022)
Published in physica status solidi (b) (01.10.2022)
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Journal Article
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
Uedono, Akira, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji
Published in Scientific reports (19.10.2021)
Published in Scientific reports (19.10.2021)
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Journal Article
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
Uedono, Akira, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Shima, Kohei, Chichibu, Shigefusa F., Uzuhashi, Jun, Ohkubo, Tadakatsu, Ishibashi, Shoji, Sierakowski, Kacper, Bockowski, Michal
Published in physica status solidi (b) (01.05.2024)
Published in physica status solidi (b) (01.05.2024)
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Journal Article
Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
Shima, Kohei, Cheng, Tin S., Mellor, Christopher J., Beton, Peter H., Elias, Christine, Valvin, Pierre, Gil, Bernard, Cassabois, Guillaume, Novikov, Sergei V., Chichibu, Shigefusa F.
Published in Scientific reports (02.01.2024)
Published in Scientific reports (02.01.2024)
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Journal Article
Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells
Nagasawa, Yosuke, Kojima, Kazunobu, Hirano, Akira, Sako, Hideki, Hashimoto, Ai, Sugie, Ryuichi, Ippommatsu, Masamichi, Honda, Yoshio, Amano, Hiroshi, Chichibu, Shigefusa F
Published in Journal of physics. D, Applied physics (02.12.2021)
Published in Journal of physics. D, Applied physics (02.12.2021)
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Journal Article
Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono, Akira, Iguchi, Hiroko, Narita, Tetsuo, Kataoka, Keita, Egger, Werner, Koschine, Tönjes, Hugenschmidt, Christoph, Dickmann, Marcel, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Ishibashi, Shoji
Published in physica status solidi (b) (01.10.2019)
Published in physica status solidi (b) (01.10.2019)
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Journal Article
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki
Published in Nature materials (01.10.2006)
Published in Nature materials (01.10.2006)
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Journal Article
High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN
Schimmel, Saskia, Salamon, Michael, Tomida, Daisuke, Neumeier, Steffen, Ishiguro, Tohru, Honda, Yoshio, Chichibu, Shigefusa F, Amano, Hiroshi
Published in Materials (01.09.2022)
Published in Materials (01.09.2022)
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Journal Article
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Kawasaki, Masashi, Tsukazaki, Atsushi, Ohtomo, Akira, Onuma, Takeyoshi, Ohtani, Makoto, Makino, Takayuki, Sumiya, Masatomo, Ohtani, Keita, Chichibu, Shigefusa F, Fuke, Syunrou, Segawa, Yusaburou, Ohno, Hideo, Koinuma, Hideomi
Published in Nature materials (01.01.2005)
Published in Nature materials (01.01.2005)
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