High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT
Lumbantoruan, Franky, Wu, Chia‐Hsun, Zheng, Xia‐Xi, Singh, Sankalp K., Dee, Chang‐Fu, Majlis, Burhanuddin Y., Chang, Edward‐Yi
Published in Physica status solidi. A, Applications and materials science (06.06.2018)
Published in Physica status solidi. A, Applications and materials science (06.06.2018)
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Journal Article
Vaginal birth after cesarean section—The world trend and local experience in Taiwan
Tsai, Hsiu-Ting, Wu, Chia-Hsun
Published in Taiwanese journal of obstetrics & gynecology (01.02.2017)
Published in Taiwanese journal of obstetrics & gynecology (01.02.2017)
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Journal Article
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
Yen-Ku Lin, Noda, Shuichi, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation
Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.01.2017)
Published in IEEE electron device letters (01.01.2017)
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Journal Article
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
Hsu, Ching-Hsiang, Shih, Wang-Cheng, Lin, Yueh-Chin, Hsu, Heng-Tung, Hsu, Hisang-Hua, Huang, Yu-Xiang, Lin, Tai-Wei, Wu, Chia-Hsun, Wu, Wen-Hao, Maa, Jer-Shen, Iwai, Hiroshi, Kakushima, Kuniyuki, Chang, Edward Yi
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Prenatal diagnosis and molecular cytogenetic characterization of mosaicism for a small supernumerary marker chromosome derived from chromosome 21q11.2-q21.1 and a literature review
Chen, Chih-Ping, Chen, Ming, Wu, Chia-Hsun, Lin, Chen-Ju, Chern, Schu-Rern, Wu, Peih-Shan, Chen, Yen-Ni, Chen, Shin-Wen, Chang, Shun-Ping, Chen, Li-Feng, Wang, Wayseen
Published in Taiwanese journal of obstetrics & gynecology (01.08.2017)
Published in Taiwanese journal of obstetrics & gynecology (01.08.2017)
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Journal Article
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering
Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi
Published in IEEE electron device letters (01.09.2021)
Published in IEEE electron device letters (01.09.2021)
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Journal Article
Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications
Wu, Jui-Sheng, Weng, You-Chen, Yang, Tsung-Ying, Wu, Chia-Hsun, Lee, Chih-Chieh, Iwai, Hiroshi, Chang, Edward Yi
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
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Journal Article
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chang, Edward Yi
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
Han, Ping-Cheng, Yan, Zong-Zheng, Wu, Chia-Hsun, Chang, Edward Yi, Ho, Yu-Hsuan
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack
Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Huang, Cheng-Jun, Liang, Yan-Kui, Weng, You-Chen, Chang, Edward Yi
Published in IEEE journal of the Electron Devices Society (01.01.2022)
Published in IEEE journal of the Electron Devices Society (01.01.2022)
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Journal Article