Comparative bioavailability of rifampicin and isoniazid in fixed-dose combinations and single-drug formulations
Hao, L-H., Guo, S-C., Liu, C-C., Zhu, H., Wang, B., Fu, L., Chen, M-T., Zhou, L., Chi, J-Y., Yang, W., Nie, W-J., Lu, Y.
Published in The international journal of tuberculosis and lung disease (01.12.2014)
Published in The international journal of tuberculosis and lung disease (01.12.2014)
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Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, Lin, G., Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, Chi, J.-Y.
Published in IEEE photonics technology letters (01.08.2005)
Published in IEEE photonics technology letters (01.08.2005)
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The ERK–ZEB1 pathway mediates epithelial–mesenchymal transition in pemetrexed resistant lung cancer cells with suppression by vinca alkaloids
Chiu, L-Y, Hsin, I-L, Yang, T-Y, Sung, W-W, Chi, J-Y, Chang, J T, Ko, J-L, Sheu, G-T
Published in Oncogene (12.01.2017)
Published in Oncogene (12.01.2017)
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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
Chen, C.H., Chang, S.J., Su, Y.K., Chi, G.C., Chi, J.Y., Chang, C.A., Sheu, J.K., Chen, J.F.
Published in IEEE photonics technology letters (01.08.2001)
Published in IEEE photonics technology letters (01.08.2001)
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Development and evaluation of an MRE-based absorber with two individually controllable natural frequencies
Yang, J, Sun, S S, Chi, J Y, Ning, D H, Du, H, Zhang, S W, Li, W H, Mao, S X
Published in Smart materials and structures (01.09.2018)
Published in Smart materials and structures (01.09.2018)
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1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
Yu, H.C., Wang, J.S., Su, Y.K., Chang, S.J., Lai, F.I., Chang, Y.H., Kuo, H.C., Sung, C.P., Yang, H.P.D., Lin, K.F., Wang, J.M., Chi, J.Y., Hsiao, R.S., Mikhrin, S.
Published in IEEE photonics technology letters (15.01.2006)
Published in IEEE photonics technology letters (15.01.2006)
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Quantum-dot infrared photodetectors with p-type-doped GaAs barrier Layers
Shu-Ting Chou, Cheng-Hsuan Tsai, Meng-Chyi Wu, Lin, S.-Y., Chi, J.-Y.
Published in IEEE photonics technology letters (01.11.2005)
Published in IEEE photonics technology letters (01.11.2005)
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Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices
Chen, T T, Chen, Y F, Wang, J S, Huang, Y S, Hsiao, R S, Chen, J F, Lai, C M, Chi, J Y
Published in Semiconductor science and technology (01.09.2007)
Published in Semiconductor science and technology (01.09.2007)
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Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
WANG, J. S, LIN, G, CHEN, J. F, HSIAO, R. S, YANG, C. S, LAI, C. M, LIANG, C. Y, LIU, H. Y, CHEN, T. T, CHEN, Y. F, CHI, J. Y
Published in Applied physics. B, Lasers and optics (01.12.2005)
Published in Applied physics. B, Lasers and optics (01.12.2005)
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Singlemode InAs quantum dot photonic crystal VCSELs
YANG, H. P. D, CHANG, Y. H, LAI, F. I, YU, H. C, HSU, Y. J, LIN, G, HSIAO, R. S, KUO, H. C, WANG, S. C, CHI, J. Y
Published in Electronics letters (29.09.2005)
Published in Electronics letters (29.09.2005)
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Chiu, Chien-Wen, Chang, Chih-Hao, Chi, Yu-Jen
Published in Electromagnetic waves (Cambridge, Mass.) (2010)
Published in Electromagnetic waves (Cambridge, Mass.) (2010)
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The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
Blokhin, S A, Sakharov, A V, Maleev, N A, Kulagina, M M, Shernyakov, Yu M, Novikov, I I, Gordeev, N Yu, Maximov, M V, Kuzmenkov, A G, Ustinov, V M, Ledentsov, N N, Kovsh, A R, Mikhrin, S S, Lin, G, Chi, J Y
Published in Semiconductor science and technology (01.03.2007)
Published in Semiconductor science and technology (01.03.2007)
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Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
Yang, H-P D, Lu, C, Hsiao, R, Chiou, C, Lee, C, Huang, C, Yu, H, Wang, C, Lin, K, Maleev, N A, Kovsh, A R, Sung, C, Lai, C, Wang, J, Chen, J, Lee, T, Chi, J Y
Published in Semiconductor science and technology (01.08.2005)
Published in Semiconductor science and technology (01.08.2005)
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MBE growth of high-quality GaAsN bulk layers
Wang, J S, Kovsh, A R, Wei, L, Chi, J Y, Wu, Y T, Wang, P Y, Ustinov, V M
Published in Nanotechnology (01.12.2001)
Published in Nanotechnology (01.12.2001)
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