Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
Kryzhanovskaya, N. V., Lundin, W. V., Nikolaev, A. E., Tsatsul’nikov, A. F., Sakharov, A. V., Pavlov, M. M., Cherkachin, N. A., Hÿtch, M. J., Valkovsky, G. A., Yagovkina, M. A., Usov, S. O.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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