Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI
Zhang, Wentong, Zhan, Zhenya, Yu, Yang, Cheng, Shikang, Gu, Yan, Zhang, Sen, Luo, Xiaorong, Li, Zehong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Published in IEEE electron device letters (01.11.2017)
Published in IEEE electron device letters (01.11.2017)
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Journal Article
Investigation of a latch-up immune silicon controlled rectifier for robust ESD application
Zhao Qi, Ming Qiao, Xin Zhou, Wen Yang, Dong Fang, Shikang Cheng, Sen Zhang, Zhaoji Li, Bo Zhang
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
A novel 700V deep trench isolated double RESURF LDMOS with P-sink layer
Shikang Cheng, Dong Fang, Ming Qiao, Sen Zhang, Guangsheng Zhang, Yan Gu, Yitao He, Xin Zhou, Zhao Qi, Zhaoji Li, Bo Zhang
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect
Zhang, Wentong, He, Junqing, Cheng, Shikang, Zhang, Sen, He, Boyong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Published in IEEE electron device letters (01.09.2020)
Published in IEEE electron device letters (01.09.2020)
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Journal Article
Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance
Deng, Gaoqiang, Luo, Xiaorong, Zhao, Zheyan, Wei, Jie, Cheng, Shikang, Li, Congcong, Ma, Zhen, Zhang, Bo, Zhang, Sen
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region
Zhang, Wentong, Li, Lu, Qiao, Ming, Zhan, Zhenya, Cheng, Shikang, Zhang, Sen, He, Boyong, Luo, Xiaorong, Li, Zhaoji, Zhang, Bo
Published in IEEE electron device letters (01.07.2019)
Published in IEEE electron device letters (01.07.2019)
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Journal Article
Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability
Zhang, Wentong, Wang, Rui, Cheng, Shikang, Gu, SenYan, Zhang, Sen, He, Boyong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Published in IEEE electron device letters (01.12.2019)
Published in IEEE electron device letters (01.12.2019)
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Journal Article
Novel Silicon-Controlled Rectifier With Snapback-Free Performance for High-Voltage and Robust ESD Protection
Qi, Zhao, Qiao, Ming, Liang, Longfei, Zhang, Fabei, Zhou, Xin, Cheng, Shikang, Zhang, Sen, Lin, Feng, Sun, Guipeng, Li, Zhaoji, Zhang, Bo
Published in IEEE electron device letters (01.03.2019)
Published in IEEE electron device letters (01.03.2019)
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Journal Article
Non-full depletion mode and its experimental realization of the lateral superjunction
Zhang, Wentong, Pu, Song, Lai, Chunlan, Ye, Li, Cheng, Shikang, Zhang, Sen, He, Boyong, Wang, Zhuo, Luo, Xiaorong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
A 600V high-side gate drive circuit with ultra-low propagation delay for enhancement mode GaN devices
Lu, Yangyang, Zhu, Jing, Sun, Weifeng, Zhang, Yunwu, Hu, Kongsheng, Yu, Zhicheng, Leng, Jing, Cheng, Shikang, Zhang, Sen
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer
Li, Shaohong, Zhang, Long, Zhu, Jing, Sun, Weifeng, Tang, Qingxi, Wang, Hao, Sun, Ling, Gu, Yan, Cheng, Shikang, Zhang, Sen, Yi, Yangbo
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Chemical characteristics of fine particles and their impact on visibility impairment in Shanghai based on a 1-year period observation
Zhou, Min, Qiao, Liping, Zhu, Shuhui, Li, Li, Lou, Shengrong, Wang, Hongli, Wang, Qian, Tao, Shikang, Huang, Cheng, Chen, Changhong
Published in Journal of environmental sciences (China) (01.10.2016)
Published in Journal of environmental sciences (China) (01.10.2016)
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Journal Article