Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly
Huang, Xiaohe, Liu, Chunsen, Zeng, Senfeng, Tang, Zhaowu, Wang, Shuiyuan, Chen, Xiaozhang, Zhang, David Wei, Zhou, Peng
Published in Advanced materials (Weinheim) (01.09.2021)
Published in Advanced materials (Weinheim) (01.09.2021)
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Journal Article
Multioperation Mode Ferroelectric Channel Devices for Memory and Computation
Sun, Yibo, Wang, Shuiyuan, Chen, Xiaozhang, Zhang, Zhenhan, Zhou, Peng
Published in Advanced intelligent systems (01.07.2022)
Published in Advanced intelligent systems (01.07.2022)
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Journal Article
Temperature-Dependent Logic Behavior of Logic Transistors Based on WS2
Xiong, Yan, Chen, Xiaozhang, Zhang, Zhenhan, Chen, Huawei, Li, Jiayi, Liu, Chunsen, Zhou, Peng
Published in IEEE access (2020)
Published in IEEE access (2020)
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Journal Article
Design of a tunable resonant electric field-enhanced structure
Xiaozhang, Chen, Bo, Wu, Yi, Lin, Yunqi, Fu
Published in 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) (14.05.2023)
Published in 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) (14.05.2023)
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Conference Proceeding
Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐Volatile Phase‐Change Materials
Chen, Xiaozhang, Xue, Yuan, Sun, Yibo, Shen, Jiabin, Song, Sannian, Zhu, Min, Song, Zhitang, Cheng, Zengguang, Zhou, Peng
Published in Advanced materials (Weinheim) (01.09.2023)
Published in Advanced materials (Weinheim) (01.09.2023)
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Journal Article
PCB-Based Electrically Tunable Resonator for VHF Band Rydberg Atomic Enhancement Sensing
Yang, Kai, Chen, Xiaozhang, Mao, Ruiqi, Li, Jianbing, Fu, Yunqi
Published in IEEE transactions on antennas and propagation (01.07.2024)
Published in IEEE transactions on antennas and propagation (01.07.2024)
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Journal Article
Study of resistive switching behavior in HfO2 nanocrystals synthesized via a low temperature hydrothermal method
Chen, Xiaozhang, Li, Heng, Tian, Zhaobo, Zhu, Yuan, Su, Longxing
Published in Nanotechnology (18.03.2024)
Published in Nanotechnology (18.03.2024)
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Journal Article
Study of resistive switching behavior in HfO 2 nanocrystals synthesized via a low temperature hydrothermal method
Chen, Xiaozhang, Li, Heng, Tian, Zhaobo, Zhu, Yuan, Su, Longxing
Published in Nanotechnology (18.03.2024)
Published in Nanotechnology (18.03.2024)
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Journal Article
Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures
Li, Jingyu, Liu, Lan, Chen, Xiaozhang, Liu, Chunsen, Wang, Jianlu, Hu, Weida, Zhang, David Wei, Zhou, Peng
Published in Advanced materials (Weinheim) (01.03.2019)
Published in Advanced materials (Weinheim) (01.03.2019)
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Journal Article
Dramatic switching behavior in suspended MoS2 field-effect transistors
Chen, Huawei, Li, Jingyu, Chen, Xiaozhang, Zhang, David, Zhou, Peng
Published in Semiconductor science and technology (12.01.2018)
Published in Semiconductor science and technology (12.01.2018)
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Journal Article
A two-terminal binary HfO2 resistance switching random access memory for an artificial synaptic device
Chen, Xiaozhang, You Lv, Tian, Zhaobo, Yang, Jingxi, Zhu, Yuan, Su, Longxing
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (05.01.2023)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (05.01.2023)
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Journal Article
Study of resistive switching behavior in HfO2nanocrystals synthesized via a low temperature hydrothermal method
Chen, Xiaozhang, Li, Heng, Tian, Zhaobo, Zhu, Yuan, Su, Longxing
Published in Nanotechnology (04.01.2024)
Published in Nanotechnology (04.01.2024)
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Journal Article
Dramatic switching behavior in suspended MoS 2 field-effect transistors
Chen, Huawei, Li, Jingyu, Chen, Xiaozhang, Zhang, David, Zhou, Peng
Published in Semiconductor science and technology (01.02.2018)
Published in Semiconductor science and technology (01.02.2018)
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Journal Article
Memory Devices: Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures (Adv. Mater. 11/2019)
Li, Jingyu, Liu, Lan, Chen, Xiaozhang, Liu, Chunsen, Wang, Jianlu, Hu, Weida, Zhang, David Wei, Zhou, Peng
Published in Advanced materials (Weinheim) (15.03.2019)
Published in Advanced materials (Weinheim) (15.03.2019)
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Journal Article
Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate
Lin, Jun, Chen, Xiaozhang, Duan, Xinpei, Yu, Zhiming, Niu, Wencheng, Zhang, Mingliang, Liu, Chang, Li, Guoli, Liu, Yuan, Liu, Xingqiang, Zhou, Peng, Liao, Lei
Published in Advanced science (01.03.2022)
Published in Advanced science (01.03.2022)
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Journal Article
Analysis of the relationship between the contact barrier and rectification ratio in a two-dimensional P-N heterojunction
Chen, Xiaozhang, Chen, Huawei, Wang, Zhen, Shan, Yuwei, Zhang, David Wei, Wu, Shiwei, Hu, Weida, Zhou, Peng
Published in Semiconductor science and technology (01.11.2018)
Published in Semiconductor science and technology (01.11.2018)
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Journal Article