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Enhanced interface properties of diamond MOSFETs with Al 2 O 3 gate dielectric deposited via ALD at a high temperature
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Published in Chinese physics B (01.05.2021)
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Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature Project supported by the National Natural Science Foundation of China (Grant No. 61922021), the National Key Research and Development Project, China (Grant No. 2018YFE0115500), and the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration, China
Fu, Yu, Xu, Rui-Min, Yu, Xin-Xin, Zhou, Jian-Jun, Kong, Yue-Chan, Chen, Tang-Sheng, Yan, Bo, Li, Yan-Rong, Ma, Zheng-Qiang, Xu, Yue-Hang
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