Search Results - "Chen, Shen Li" :: K.UTB vyhledávací portál

Loading…

Drain Side Area-Modulation Effect of Parasitic Schottky Diode on ESD Reliability for High Voltage P-Channel Lateral-Diffused MOSFETs

by Hong, Shi-Zhe, Chen, Shen-Li, Chen, Hung-Wei, Lee, Yi-Mu
Published in IEEE electron device letters (01.10.2021)

Get full text

Journal Article

Loading…

ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes

by Lin, Po-Lin, Chen, Shen-Li, Fan, Sheng-Kai
Published in IEEE electron device letters (01.11.2020)

Get full text

Journal Article

Loading…

Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

by Chen, Shen-Li, Wu, Yi-Cih
Published in Sensors (Basel, Switzerland) (06.10.2018)

Get full text

Journal Article

Loading…

Impacts of Leakage-Biasing Failure-Mode Identification in the Transmission-Line Pulse Testing for Low-/High-Voltage MOSFET Components

by Chen, Shen-Li, Lee, Min-Hua
Published in IEEE transactions on industry applications (01.05.2017)

Get full text

Journal Article

Loading…

ESD-Reliability Enhancement of Circular UHV 300-V Power nLDMOS by the Drain-side Superjunction Structure

by Chen, Shen-Li, Wu, Pei-Lin, Lin, Po-Lin
Published in IEEE electron device letters (01.04.2019)

Get full text

Journal Article

Loading…

Impacts of Floating Poly on Electrostatic Discharge Protection of Power-Managed High-Voltage Laterally Diffused Metal Oxide Semiconductor Components

by Mai, Xing-Chen, Chen, Shen-Li, Chen, Hung-Wei, Lee, Yi-Mu
Published in Electronics (Basel) (01.07.2023)

Get full text

Journal Article

Loading…

Enhanced Electrostatic Discharge Reliability in GaN-Based Light-Emitting Diodes by the Electrode Engineering

by Chen, Shen-Li
Published in Journal of display technology (01.10.2014)

Get full text

Journal Article

Loading…

Design and Layout Strategy in the 60-V Power pLDMOS With Drain-End Modulated Engineering of Reliability Considerations

by Chen, Shen-Li, Huang, Yu-Ting
Published in IEEE transactions on power electronics (01.07.2016)

Get full text

Journal Article

Loading…

Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well

by Lin, Po-Lin, Chen, Shen-Li, Fan, Sheng-Kai
Published in IEEE journal of the Electron Devices Society (2021)

Get full text

Journal Article

Loading…

Strengthen Anti-ESD Characteristics in an HV LDMOS With Superjunction Structures

by Chen, Shen-Li, Lai, Yi-Sheng
Published in IEEE transactions on power electronics (01.05.2015)

Get full text

Journal Article

Loading…

Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region

by Lan, Tien-Yu, Chen, Shen-Li, Chen, Hung-Wei, Lee, Yi-Mu
Published in IEEE journal of the Electron Devices Society (2021)

Get full text

Journal Article

Loading…

Robust ESD-Reliability Design of 300-V Power N-Channel LDMOSs with the Elliptical Cylinder Super-Junctions in the Drain Side

by Chen, Shen-Li, Wu, Pei-Lin, Chen, Yu-Jen
Published in Electronics (Basel) (01.05.2020)

Get full text

Journal Article

Loading…

Electrostatic Discharge Sensing of Concentric Circles of Poly2 with Different Potentials and Discrete High-voltage P-well Modulation on Circular Ultrahigh-voltage N-channel Laterally Diffused MOSFET Devices

by Liu, Zhi-Wei, Chen, Shen-Li, Lai, Jhong-Yi, Chen, Hung-Wei, Chen, Hsun-Hsiang, Lee, Yi-Mu
Published in Sensors and materials (17.05.2022)

Get full text

Journal Article

Loading…

Electrostatic Discharge Reliability Sensing of Ultrahigh-voltage N-channel Laterally Diffused MOSFETs Modulated by Different Operating Voltages

by Lai, Jhong-Yi, Chen, Shen-Li, Liu, Zhi-Wei, Chen, Hung-Wei, Chen, Hsun-Hsiang, Lee, Yi-Mu
Published in Sensors and materials (17.05.2022)

Get full text

Journal Article

Loading…

ESD Improvements on Power N-channel LDMOS Devices by the Composite Structure of Super Junctions Integrated with SCRs in the Drain Side

by Chen, Hung-Wei, Chen, Shen-Li, Huang, Yu-Ting, Chen, Hsun-Hsiang
Published in IEEE journal of the Electron Devices Society (01.01.2020)

Get full text

Journal Article

Loading…

Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs

by Fan, Sheng-Kai, Chen, Shen-Li, Lin, Po-Lin, Chen, Hung-Wei
Published in Electronics (Basel) (01.05.2020)

Get full text

Journal Article

Loading…

The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

by Chen, Shen-Li
Published in Advances in Fuzzy Systems (01.01.2015)

Get full text

Journal Article

Loading…

Primary and booster vaccination in reducing severe clinical outcomes associated with Omicron Naïve infection

by Hsu, Chen-Yang, Chang, Jung-Chen, Chen, Sam Li-Shen, Chang, Hao-Hsiang, Lin, Abbie Ting-Yu, Yen, Amy Ming-Feng, Chen, Hsiu-Hsi
Published in Journal of infection and public health (01.01.2023)

Get full text

Journal Article

Loading…

A Comprehensive Evaluation of Drain-side Layout Topologies on the Power nLDMOS ESD/LU Reliabilities

by Chen, Shen-Li, Lee, Min-Hua
Published in Research Journal of Applied Sciences, Engineering and Technology (25.07.2014)

Get full text

Journal Article

Loading…

Signal Sensing By The Architecture Of Embedded I/O Pad Circuits

by Chen, Shen-Li, Cheng, Yang-Shiung
Published in International journal on smart sensing and intelligent systems (01.01.2014)

Get full text

Journal Article

Refine Results

Format

Subject Area

Topic

Language

Year of Publication

Database