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Fully Printed Separated Carbon Nanotube Thin Film Transistor Circuits and Its Application in Organic Light Emitting Diode Control
Chen, Pochiang, Fu, Yue, Aminirad, Radnoosh, Wang, Chuan, Zhang, Jialu, Wang, Kang, Galatsis, Kosmas, Zhou, Chongwu
Published in Nano letters (14.12.2011)
Published in Nano letters (14.12.2011)
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High performance In2O3 nanowire transistors using organic gate nanodielectrics
Ju, Sanghyun, Ishikawa, Fumiaki, Chen, Pochiang, Chang, Hsiao-Kang, Zhou, Chongwu, Ha, Young-geun, Liu, Jun, Facchetti, Antonio, Marks, Tobin J., Janes, David B.
Published in Applied physics letters (02.06.2008)
Published in Applied physics letters (02.06.2008)
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Oxygen plasma exposure effects on indium oxide nanowire transistors
Kim, Seongmin, Delker, Collin, Chen, Pochiang, Zhou, Chongwu, Ju, Sanghyun, Janes, David B
Published in Nanotechnology (09.04.2010)
Published in Nanotechnology (09.04.2010)
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1∕f noise of SnO2 nanowire transistors
Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J., Kim, Sun Kook, Mohammadi, Saeed, Janes, David B.
Published in Applied physics letters (16.06.2008)
Published in Applied physics letters (16.06.2008)
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Oxygen plasma exposure effects on indium oxide nanowire transistors
Kim, Seongmin, Delker, Collin, Chen, Pochiang, Zhou, Chongwu, Ju, Sanghyun, Janes, David B
Published in Nanotechnology (09.04.2010)
Published in Nanotechnology (09.04.2010)
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Femtosecond laser annealing effects on indium oxide nanowire transistors
Seongmin Kim, Sunkook Kim, Chunghun Lee, Srisungsitthisunti, P., Pochiang Chen, Chongwu Zhou, Xianfan Xu, Minghao Qi, Mohammadi, S., Sanghyun Ju, Janes, D.B.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
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1 ∕ f noise of Sn O 2 nanowire transistors
Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J., Kim, Sun Kook, Mohammadi, Saeed, Janes, David B.
Published in Applied physics letters (19.06.2008)
Published in Applied physics letters (19.06.2008)
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High performance In 2 O 3 nanowire transistors using organic gate nanodielectrics
Ju, Sanghyun, Ishikawa, Fumiaki, Chen, Pochiang, Chang, Hsiao-Kang, Zhou, Chongwu, Ha, Young-geun, Liu, Jun, Facchetti, Antonio, Marks, Tobin J., Janes, David B.
Published in Applied physics letters (02.06.2008)
Published in Applied physics letters (02.06.2008)
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Journal Article