Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1-xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment
Qin, Jian, Chen, Jingxiong, Xiao, Wenxuan, Wang, Hong
Published in IEEE journal of the Electron Devices Society (01.01.2024)
Published in IEEE journal of the Electron Devices Society (01.01.2024)
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Journal Article
A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter
Guan, Guanghao, Chen, Jingxiong, Liu, Xiaoyi, Wang, Hong
Published in IEEE journal of the Electron Devices Society (2023)
Published in IEEE journal of the Electron Devices Society (2023)
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Journal Article
Debris Flow Simulation-Oriented Three- Dimensional Scenery Modeling and Rendering
Ye, Jian, Lin, Jiayuan, Tao, Heping, Chen, Xiaoqing, Chen, Jingxiong
Published in Geo-spatial information science (01.01.2011)
Published in Geo-spatial information science (01.01.2011)
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Journal Article
A Comprehensive Analysis of the 2-DEG Transport Properties in In x Al 1 – x N/AlN/GaN Heterostructure: Experiments and Numerical Simulations
Qin, Jian, Zhou, Quanbin, Liao, Biyan, Chen, Jingxiong, Wang, Hong
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
High Breakdown-Voltage GaN-Based HEMTs on Silicon With Ti/Al/Ni/Ti Ohmic Contacts
Gao, Sheng, Liu, Xiaoyi, Chen, Jingxiong, Xie, Zijing, Zhou, Quanbin, Wang, Hong
Published in IEEE electron device letters (01.04.2021)
Published in IEEE electron device letters (01.04.2021)
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Journal Article
A Comprehensive Analysis of the 2-DEG Transport Properties in In x Al1 – x N/AlN/GaN Heterostructure: Experiments and Numerical Simulations
Qin, Jian, Zhou, Quanbin, Liao, Biyan, Chen, Jingxiong, Wang, Hong
Published in IEEE transactions on electron devices (01.01.2020)
Published in IEEE transactions on electron devices (01.01.2020)
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Journal Article
An Efficient S-Band Doherty Power Amplifier Using Multi-state Integrated Matching
Xiong, Zhenting, Wang, Jingying, Chen, Jingxiong, Wang, Hong
Published in Circuits, systems, and signal processing (01.03.2023)
Published in Circuits, systems, and signal processing (01.03.2023)
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Journal Article
Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In x Al 1–x N/AlN/GaN MOS-HEMTs Fabricated by Using NiO x Gate and Fluorine Treatment
Qin, Jian, Chen, Jingxiong, Xiao, Wenxuan, Wang, Hong
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article