Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
Fu, Yi-Keng, Chen, Bo-Chun, Fang, Yen-Hsiang, Jiang, Ren-Hao, Lu, Yu-Hsuan, Xuan, Rong, Huang, Kai-Feng, Lin, Chia-Feng, Su, Yan-Kuin, Chen, Jebb-Fang, Chang, Chun-Yen
Published in IEEE photonics technology letters (01.10.2011)
Published in IEEE photonics technology letters (01.10.2011)
Get full text
Journal Article
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
Fu, Yi-Keng, Lu, Yu-Hsuan, Jiang, Ren-Hao, Chen, Bo-Chun, Fang, Yen-Hsiang, Xuan, Rong, Su, Yan-Kuin, Lin, Chia-Feng, Chen, Jebb-Fang
Published in Solid-state electronics (01.08.2011)
Published in Solid-state electronics (01.08.2011)
Get full text
Journal Article