Physical and chemical mechanisms in oxide-based resistance random access memory
Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Published in Nanoscale research letters (12.03.2015)
Published in Nanoscale research letters (12.03.2015)
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Flexible PDMS-Based SERS Substrates Replicated from Beetle Wings for Water Pollutant Detection
Lu, Chen-Hsin, Cheng, Ming-Ren, Chen, Sheng, Syu, Wei-Lin, Chien, Ming-Yen, Wang, Kuan-Syun, Chen, Jeng-Shiung, Lee, Po-Han, Liu, Ting-Yu
Published in Polymers (30.12.2022)
Published in Polymers (30.12.2022)
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Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
Zhang, Rui, Young, Tai-Fa, Chen, Min-Chen, Chen, Hsin-Lu, Liang, Shu-Ping, Syu, Yong-En, Sze, Simon M., Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Huang, Syuan-Yong, Chen, Wen-Jen, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui
Published in IEEE electron device letters (01.06.2014)
Published in IEEE electron device letters (01.06.2014)
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Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
Shih, Chih-Cheng, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Chen, Jung-Hui, Chen, Kai-Huang, Young, Tai-Fa, Chen, Hsin-Lu, Lou, Jen-Chung, Chu, Tian-Jian, Huang, Syuan-Yong, Bao, Ding-Hua, Sze, Simon M.
Published in IEEE electron device letters (01.06.2014)
Published in IEEE electron device letters (01.06.2014)
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Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic
Chen, Hsin-Lu, Chen, Po-Hsun, Chang, Ting-Chang, Young, Tai-Fa, Wang, Min-Chuan, Ai, Chi-Fong, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chen, Min-Chen, Su, Yu-Ting, Yang, Chih-Cheng, Lin, Chun-Chu
Published in IEEE electron device letters (01.10.2017)
Published in IEEE electron device letters (01.10.2017)
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An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
Wei Zhang, Ying Hu, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Hsin-Lu Chen, Yu-Ting Su, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Wan-Ching Su, Jin-Cheng Zheng, Ya-Chi Hung, Sze, Simon M.
Published in IEEE electron device letters (01.08.2015)
Published in IEEE electron device letters (01.08.2015)
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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide
Chen, Bo-Wei, Chen, Hsin-Lu, Chang, Ting-Chang, Hung, Yu-Ju, Huang, Shin-Ping, Zheng, Yu-Zhe, Lin, Yu-Ho, Liao, Po-Yung, Chen, Li-Hui, Yang, Jian-Wen, Chiang, Hsiao-Cheng, Su, Wan-Ching, Tsao, Yu-Ching, Chu, Ann-Kuo, Li, Hung-Wei, Tsai, Chih-Hung, Lu, Hsueh-Hsing, Chang, Kuan-Chang, Young, Tai-Fa
Published in IEEE transactions on electron devices (01.08.2017)
Published in IEEE transactions on electron devices (01.08.2017)
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Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory
Chen, Wen-Chung, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chen, Hsin-Lu, Shih, Chih-Cheng, Yang, Chih-Cheng, Lin, Jiun-Chiu, Lin, Yu-Shuo, Su, Yu-Ting, Chen, Po-Hsun
Published in IEEE electron device letters (01.04.2017)
Published in IEEE electron device letters (01.04.2017)
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Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
Wei Zhang, Ying Hu, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Hsin-Lu Chen, Yu-Ting Su, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Min-Chen Chen, Jin-Cheng Zheng, Hua-Ching Lin, Sze, Simon M.
Published in IEEE electron device letters (01.06.2015)
Published in IEEE electron device letters (01.06.2015)
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Published in Nanoscale research letters (29.01.2014)
Published in Nanoscale research letters (29.01.2014)
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Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
Tian-Jian Chu, Tsung-Ming Tsai, Ting-Chang Chang, Kuan-Chang Chang, Rui Zhang, Kai-Huang Chen, Jung-Hui Chen, Tai-Fa Young, Jen-Wei Huang, Jen-Chung Lou, Min-Chen Chen, Syuan-Yong Huang, Hsin-Lu Chen, Yong-En Syu, Dinghua Bao, Life, Simon M.
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
Su, Yu-Ting, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Hsin-Lu, Chen, Min-Chen, Yang, Chih-Cheng, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.
Published in Japanese Journal of Applied Physics (01.01.2017)
Published in Japanese Journal of Applied Physics (01.01.2017)
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Fault-Tolerant Near-Memory MAC Design with Redundant Memories
Lu, Hsin-Chen, Huang, Shih-Hsu
Published in 2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) (17.07.2023)
Published in 2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) (17.07.2023)
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Conference Proceeding
New insights into the pathological mechanisms of cerebrotendinous xanthomatosis in the Taiwanese using genomic and proteomic tools
Wang, Pei-Weg, Chang, Wen-Neng, Lu, Chen-Hsin, Chao, David, Schrag, Christiaan, Pan, Tai-Long
Published in Proteomics (Weinheim) (01.02.2006)
Published in Proteomics (Weinheim) (01.02.2006)
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Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor
Chen, Yi-Jiun, Lou, Jen-Chung, Chen, Kai-Huang, Chen, Jung-Hui, Zheng, Jin-Cheng, Sze, Simon M., Chang, Kuan-Chang, Chang, Ting-Chang, Chen, Hsin-Lu, Young, Tai-Fa, Tsai, Tsung-Ming, Zhang, Rui, Chu, Tian-Jian, Ciou, Jian-Fa
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Huang, Ren-Wei, Liu, Chien-Pang, Fu, Hsiu-Ting, Hsieh, Kun-Hung, Lin, Chun-Liang, Lu, Hsin-Chen, Chen, Yen-Ling, Chen, Min-Chieh
Year of Publication 03.11.2020
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Year of Publication 03.11.2020
Patent
High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure
Kuan-Chang Chang, Rui Zhang, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Hsin-Lu Chen, Chih-Cheng Shih, Chih-Hung Pan, Yu-Ting Su, Pei-Jung Wu, Sze, Simon M.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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