A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes
Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Chen, F. T., Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai
Published in IEEE journal of solid-state circuits (01.03.2013)
Published in IEEE journal of solid-state circuits (01.03.2013)
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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Published in Nanoscale research letters (26.06.2012)
Published in Nanoscale research letters (26.06.2012)
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Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme
Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Chen, Frederick T., Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, Yue-Der Chih
Published in IEEE journal of solid-state circuits (01.04.2014)
Published in IEEE journal of solid-state circuits (01.04.2014)
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Experimental investigation of the reliability issue of RRAM based on high resistance state conduction
Zhang, Lijie, Hsu, Yen-Ya, Chen, Frederick T, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Wei-Su, Gu, Pei-Yi, Liu, Wen-Hsing, Wang, Shun-Min, Tsai, Chen-Han, Huang, Ru, Tsai, Ming-Jinn
Published in Nanotechnology (24.06.2011)
Published in Nanotechnology (24.06.2011)
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Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
Prakash, Amit, Maikap, Siddheswar, Lai, Chao Sung, Lee, Heng Yuan, Chen, W. S, Chen, Frederick T, Kao, Ming Jer, Tsai, Ming Jinn
Published in Jpn J Appl Phys (01.04.2012)
Published in Jpn J Appl Phys (01.04.2012)
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Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
Jana, Debanjan, Maikap, Siddheswar, Tien, Ta Chang, Lee, Heng Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Published in Jpn J Appl Phys (01.04.2012)
Published in Jpn J Appl Phys (01.04.2012)
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Resistance switching for RRAM applications
Chen, Frederick T., Lee, HengYuan, Chen, YuSheng, Hsu, YenYa, Zhang, LiJie, Chen, PangShiu, Chen, WeiSu, Gu, PeiYi, Liu, WenHsing, Wang, SuMin, Tsai, ChenHan, Sheu, ShyhShyuan, Tsai, MingJinn, Huang, Ru
Published in Science China. Information sciences (01.05.2011)
Published in Science China. Information sciences (01.05.2011)
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Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Ray, Samit Kumar, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Banerjee, Writam, Maikap, Siddheswar, Lai, Chao-Sung, Chen, Yi-Yan, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn, Yang, Jer-Ren
Published in Nanoscale research letters (22.03.2012)
Published in Nanoscale research letters (22.03.2012)
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Antimony alloys for phase-change memory with high thermal stability
Kao, Kin-Fu, Chang, Chih-Chung, Chen, Frederick T., Tsai, Ming-Jinn, Chin, Tsung-Shune
Published in Scripta materialia (01.10.2010)
Published in Scripta materialia (01.10.2010)
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Three-Dimensional 4F2 ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process
WANG, Ching-Hua, TSAI, Yi-Hung, TSAI, Ming-Jinn, LIN, Kai-Chun, CHANG, Meng-Fan, KING, Ya-Chin, CHRONG JUNG LIN, SHEU, Shyh-Shyuan, CHEN, Yu-Sheng, LEE, Heng-Yuan, CHEN, Frederick T
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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28-nm 2T High- K Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes
Chin Yu Mei, Wen Chao Shen, Chun Hsiung Wu, Yue-Der Chih, Ya-Chin King, Chrong Jung Lin, Ming-Jinn Tsai, Kan-Hsueh Tsai, Chen, Frederick T.
Published in IEEE electron device letters (01.10.2013)
Published in IEEE electron device letters (01.10.2013)
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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Published in Nanoscale research letters (06.11.2012)
Published in Nanoscale research letters (06.11.2012)
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Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications
Meng-Fan Chang, Shu-Meng Yang, Chia-Chen Kuo, Ting-Chin Yang, Che-Ju Yeh, Tun-Fei Chien, Li-Yue Huang, Shyh-Shyuan Sheu, Pei-Ling Tseng, Yu-Sheng Chen, Chen, Frederick T., Tzu-Kun Ku, Ming-Jinn Tsai, Ming-Jer Kao
Published in IEEE transactions on circuits and systems. II, Express briefs (01.01.2015)
Published in IEEE transactions on circuits and systems. II, Express briefs (01.01.2015)
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Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Ray, Samit Kumar, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T., Kao, Ming-Jer, Tsai, Ming-Jinn
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Metal-Oxide RRAM
Wong, H.-S. Philip, Lee, Heng-Yuan, Yu, Shimeng, Chen, Yu-Sheng, Wu, Yi, Chen, Pang-Shiu, Lee, Byoungil, Chen, Frederick T., Tsai, Ming-Jinn
Published in Proceedings of the IEEE (01.06.2012)
Published in Proceedings of the IEEE (01.06.2012)
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Fast-Write Resistive RAM (RRAM) for Embedded Applications
Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Tai-Yuan Wu, Chen, Frederick T, Keng-Li Su, Ming-Jer Kao, Ming-Jinn Tsai
Published in IEEE design & test of computers (01.01.2011)
Published in IEEE design & test of computers (01.01.2011)
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