Controllability of Relaxation Behavior in Ag-based Diffusive Memristors
Chekol, Solomon Amsalu, Waser, Rainer, Hoffmann-Eifert, Susanne
Published in 2023 Device Research Conference (DRC) (25.06.2023)
Published in 2023 Device Research Conference (DRC) (25.06.2023)
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Conference Proceeding
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes
Park, Jaesung, Lee, Chuljun, Kwak, Myunghoon, Chekol, Solomon Amsalu, Lim, Seokjae, Kim, Myungjun, Woo, Jiyong, Hwang, Hyunsang, Lee, Daeseok
Published in Nanotechnology (26.07.2019)
Published in Nanotechnology (26.07.2019)
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Journal Article
Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
Jeonghwan Song, Jiyong Woo, Seokjae Lim, Chekol, Solomon Amsalu, Hyunsang Hwang
Published in IEEE electron device letters (01.11.2017)
Published in IEEE electron device letters (01.11.2017)
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Journal Article
3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications
Yoo, Jongmyung, Kim, Seong Hun, Chekol, Solomon Amsalu, Park, Jaehyuk, Sung, Changhyuck, Song, Jeonghwan, Lee, Donghwa, Hwang, Hyunsang
Published in Advanced electronic materials (01.07.2019)
Published in Advanced electronic materials (01.07.2019)
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Journal Article
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
Choi, Wooseok, Moon, Kibong, Kwak, Myonghoon, Sung, Changhyuck, Lee, Jongwon, Song, Jeonghwan, Park, Jaesung, Chekol, Solomon Amsalu, Hwang, Hyunsang
Published in Solid-state electronics (01.03.2019)
Published in Solid-state electronics (01.03.2019)
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Journal Article
Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)
Yoo, Jongmyung, Koo, Yunmo, Chekol, Solomon Amsalu, Park, Jaehyuk, Song, Jeonghwan, Hwang, Hyunsang
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding
Effects of Liner Thickness on the Reliability of AgTe/TiO 2 -Based Threshold Switching Devices
Song, Jeonghwan, Woo, Jiyong, Yoo, Jongmyung, Chekol, Solomon Amsalu, Lim, Seokjae, Sung, Changhyuck, Hwang, Hyunsang
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
W/WO3−x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application
Go, Jinwon, Kim, Yonghun, Kwak, Myonghoon, Song, Jeonghwan, Chekol, Solomon Amsalu, Kwon, Jung-Dae, Hwang, Hyunsang
Published in Applied physics express (01.02.2019)
Published in Applied physics express (01.02.2019)
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Journal Article
W/WO 3−x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application
Go, Jinwon, Kim, Yonghun, Kwak, Myonghoon, Song, Jeonghwan, Chekol, Solomon Amsalu, Kwon, Jung-Dae, Hwang, Hyunsang
Published in Applied physics express (01.02.2019)
Published in Applied physics express (01.02.2019)
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Journal Article