Toward Efficient and Omnidirectional n‑Type Si Solar Cells: Concurrent Improvement in Optical and Electrical Characteristics by Employing Microscale Hierarchical Structures
Wang, Hsin-Ping, Lin, Tzu-Yin, Tsai, Meng-Lin, Tu, Wei-Chen, Huang, Ming-Yi, Liu, Chee-Wee, Chueh, Yu-Lun, He, Jr-Hau
Published in ACS nano (25.03.2014)
Published in ACS nano (25.03.2014)
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The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping
Tu, Wen-Hsien, Hsu, Shu-Han, Liu, Chee-Wee
Published in IEEE transactions on electron devices (01.07.2014)
Published in IEEE transactions on electron devices (01.07.2014)
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TZE CHIANG CHEN, PENG, Cheng-Yi, TSENG, Chih-Hung, LIAO, Ming-Han, CHEN, Mei-Hsin, WU, Chih-I, CHERN, Ming-Yau, TZENG, Pei-Jer, CHEE WEE LIU
Published in IEEE transactions on electron devices (01.04.2007)
Published in IEEE transactions on electron devices (01.04.2007)
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Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes
Hsiang, Kuo-Yu, Liao, Chun-Yu, Wang, Jer-Fu, Lou, Zhao-Feng, Lin, Chen-Ying, Chiang, Shih-Hung, Liu, Chee-Wee, Hou, Tuo-Hung, Lee, Min-Hung
Published in Nanomaterials (Basel, Switzerland) (12.10.2021)
Published in Nanomaterials (Basel, Switzerland) (12.10.2021)
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Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors
PENG, Cheng-Yi, YANG, Ying-Jhe, FU, Yen-Chun, HUANG, Ching-Fang, CHANG, Shu-Tong, CHEE WEE LIU
Published in IEEE transactions on electron devices (01.08.2009)
Published in IEEE transactions on electron devices (01.08.2009)
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Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization
HUANG, Ching-Fang, SUN, Hung-Chang, YANG, Ying-Jhe, CHEN, Yen-Ting, KU, Chun-Yuan, CHEE WEE LIU, HSU, Yuan-Jun, SHIH, Ching-Chieh, CHEN, Jim-Shone
Published in IEEE electron device letters (01.04.2009)
Published in IEEE electron device letters (01.04.2009)
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The Dependence of the Performance of Strained NMOSFETs on Channel Width
Lingyen Yeh, Ming Han Liao, Chun Heng Chen, Jun Wu, Lee, J.Y.-m., Chee Wee Liu, Lee, T.L., Liang, M.S.
Published in IEEE transactions on electron devices (01.11.2009)
Published in IEEE transactions on electron devices (01.11.2009)
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Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors
HUANG, Ching-Fang, PENG, Cheng-Yi, YANG, Ying-Jhe, SUN, Hung-Chang, CHANG, Hung-Chih, KUO, Ping-Sheng, CHANG, Huan-Lin, LIU, Chee-Zxaing, CHEE WEE LIU
Published in IEEE electron device letters (01.12.2008)
Published in IEEE electron device letters (01.12.2008)
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Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes
JAN, Sun-Rong, CHENG, Tzu-Huan, HUNG, Tzer-An, KUO, Ping-Sheng, MING HAN LIAO, YU DENG, CHEE WEE LIU
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures
Wei, Wan-Rou, Tsai, Meng-Lin, Ho, Shu-Te, Tai, Shih-Hsiang, Ho, Cherng-Rong, Tsai, Shin-Hung, Liu, Chee-Wee, Chung, Ren-Jei, He, Jr-Hau
Published in Nano letters (14.08.2013)
Published in Nano letters (14.08.2013)
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Realizing High-Efficiency Omnidirectional n‑Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions
Wang, Hsin-Ping, Lin, Tzu-Yin, Hsu, Chia-Wei, Tsai, Meng-Lin, Huang, Chih-Hsiung, Wei, Wan-Rou, Huang, Ming-Yi, Chien, Yi-Jiunn, Yang, Po-Chuan, Liu, Chee-Wee, Chou, Li-Jen, He, Jr-Hau
Published in ACS nano (22.10.2013)
Published in ACS nano (22.10.2013)
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High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, Chee Wee Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Chu, Schubert S., Kuppurao, Satheesh
Published in IEEE transactions on electron devices (01.06.2017)
Published in IEEE transactions on electron devices (01.06.2017)
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Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism
Aich, Abhijit, Senapati, Asim, Lou, Zhao‐Feng, Chen, Yi‐Pin, Huang, Shih‐Yin, Maikap, Siddheswar, Lee, Min‐Hung, Liu, Chee Wee
Published in Advanced materials interfaces (01.08.2024)
Published in Advanced materials interfaces (01.08.2024)
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Electron Mobility in Junctionless Ge Nanowire NFETs
Ye, Hung-Yu, Lan, Huang-Siang, Liu, Chee Wee
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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MEXTRAM modeling of Si-SiGe HPTs
Yuan, F., Shi, J.-W., Pei, Z., Liu, C.W.
Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation
Luo, Shi, Eisler, Carissa, Wong, Tsun-Hsin, Xiao, Hai, Lin, Chuan-En, Wu, Tsung-Ta, Shen, Chang-Hong, Shieh, Jia-Min, Tsai, Chuang-Chuang, Liu, Chee-Wee, Atwater, Harry A., Goddard, William A., Lee, Jiun-Haw, Greer, Julia R.
Published in Acta materialia (01.03.2016)
Published in Acta materialia (01.03.2016)
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