Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
Joshi, Vipin, Chaudhuri, Rajarshi Roy, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
Joshi, Vipin, Roy Chaudhuri, Rajarshi, Dutta Gupta, Sayak, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer
Roy Chaudhuri, Rajarshi, Joshi, Vipin, Dutta Gupta, Sayak, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs-Part I
Roy Chaudhuri, Rajarshi, Gupta, Amratansh, Joshi, Vipin, Malik, Rasik Rashid, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
BIOREMEDIATION OF CHROMIUM (VI) BY A MICROBIAL CONSORTIUM ISOLATED FROM TANNERY EFFLUENTS AND THEIR POTENTIAL INDUSTRIAL APPLICATION
Bhattacharjee, Arghyadeep, Chaudhuri, Rajarshi, Pandey, Priyanshu, Mitra, Arup Kumar
Published in Journal of environmental engineering and landscape management (01.12.2021)
Published in Journal of environmental engineering and landscape management (01.12.2021)
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Journal Article
CORRIGENDUM: BIOREMEDIATION OF CHROMIUM (VI) BY A MICROBIAL CONSORTIUM ISOLATED FROM TANNERY EFFLUENTS AND THEIR POTENTIAL INDUSTRIAL APPLICATION
Bhattacharjee, Arghyadeep, Chaudhuri, Rajarshi, Pandey, Priyanshu, Mitra, Arup Kumar
Published in Journal of environmental engineering and landscape management (16.05.2022)
Published in Journal of environmental engineering and landscape management (16.05.2022)
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Journal Article
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State
Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG
Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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Journal Article
Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs
Mir, Mehak Ashraf, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Munshi, Mohammad Ateeb, Malik, Rasik Rashid, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
Roy Chaudhuri, Rajarshi, Gupta, Amratansh, Joshi, Vipin, Malik, Rasik Rashid, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II
Chaudhuri, Rajarshi Roy, Gupta, Amratansh, Joshi, Vipin, Malik, Rasik Rashid, Gupta, Sayak Dutta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer
Joshi, Vipin, Gupta, Sayak Dutta, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs
Verma, Rupali, Patbhaje, Utpreksh, Shah, Asif Altaf, Kumar, Jeevesh, Chaudhuri, Rajarshi Roy, Dar, Aadil Bashir, Shrivastava, Mayank
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding