Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current
Wang, Shin-Yuan, Chang, Shu-Jui, Huang, Yu-Che, Chih, Jia Hao, Lin, Yu-Chin, Cheng, Chao-Ching, Radu, Iuliana, Hu, Chenming, Chien, Chao-Hsin
Published in Applied physics letters (16.10.2023)
Published in Applied physics letters (16.10.2023)
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Journal Article
Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition
Li, Hui-Hsuan, Lin, Kuan-Yu, Tsai, Yi-He, Lin, Yu-Hsien, Chien, Chao-Hsin
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C
Chang, Shu-Jui, Wang, Shin-Yuan, Huang, Yu-Che, Chih, Jia Hao, Lai, Yu-Ting, Tsai, Yi-Wei, Lin, Jhih-Min, Chien, Chao-Hsin, Tang, Ying-Tsan, Hu, Chenming
Published in Applied physics letters (18.04.2022)
Published in Applied physics letters (18.04.2022)
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Journal Article
Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition
Li, Hui-Hsuan, Tsai, Yi-He, Lin, Yu-Hsien, Chien, Chao-Hsin
Published in IEEE electron device letters (01.08.2021)
Published in IEEE electron device letters (01.08.2021)
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Journal Article
GaN-based mini-LED matrix applied to multi-functional forward lighting
Nguyen, Quang-Khoi, Lin, Yi-Jou, Sun, Ching, Lee, Xuan-Hao, Lin, Shih-Kang, Wu, Chi-Shou, Yang, Tsung-Hsun, Wu, Tian-Li, Lee, Tsung-Xian, Chien, Chao-Hsin, Yu, Yeh-Wei, Sun, Ching-Cherng
Published in Scientific reports (19.04.2022)
Published in Scientific reports (19.04.2022)
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Journal Article
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Enhancing the Thermal Stability of GaSb Schottky-Barrier MOSFET With Pt Source/Drain
Tsai, Ming-Li, Chang, Yun-Pin, Chien, Chao-Hsin
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement
Chung, Yun-Yan, Li, Chi-Feng, Lin, Chao-Ting, Ho, Yen-Teng, Chien, Chao-Hsin
Published in IEEE electron device letters (01.10.2019)
Published in IEEE electron device letters (01.10.2019)
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Journal Article
Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
Chen, Yi-Xuan, Wang, Yi-Lin, Li, Fu-Jyuan, Chang, Shu-Jui, Lee, Tsung-En, Cheng, Chao-Ching, Lee, Meng-Chien, Li, Hui-Hsuan, Lin, Yu-Hsien, Chien, Chao-Hsin
Published in IEEE transactions on nanotechnology (2024)
Published in IEEE transactions on nanotechnology (2024)
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Journal Article
Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer
Tsai, Yi-He, Chou, Chen-Han, Chung, Yun-Yan, Yeh, Wen-Kuan, Lin, Yu-Hsien, Ko, Fu-Hsiang, Chien, Chao-Hsin
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
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Journal Article
Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors
Chiu, Hsin‐Yuan, Chao, Tzu‐Ang, Safron, Nathaniel S., Su, Sheng‐Kai, Liew, San‐Lin, Yun, Wei‐Sheng, Mao, Po‐Sen, Lin, Yu‐Tung, Hou, Vincent Duen‐Huei, Lee, Tung‐Ying, Chang, Wen‐Hao, Passlack, Matthias, Wong, Hon‐Sum Philip, Radu, Iuliana P., Wang, Han, Pitner, Gregory, Chien, Chao‐Hsin
Published in Advanced electronic materials (01.03.2024)
Published in Advanced electronic materials (01.03.2024)
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Journal Article
First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
Chou, Chen-Han, Shih, An-Shih, Yu, Shao-Cheng, Lin, Yu-Hsi, Tsai, Yi-He, Lin, Chiung-Yuan, Yeh, Wen-Kuan, Chien, Chao-Hsin
Published in IEEE electron device letters (01.11.2018)
Published in IEEE electron device letters (01.11.2018)
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Journal Article
Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
Chou, Chen-Han, Tsai, Yi-He, Hsu, Chung-Chun, Jau, Yu-Hau, Lin, Yu-Hsien, Yeh, Wen-Kuan, Chien, Chao-Hsin
Published in IEEE transactions on electron devices (01.05.2017)
Published in IEEE transactions on electron devices (01.05.2017)
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Journal Article