Ultralow contact resistance between semimetal and monolayer semiconductors
Shen, Pin-Chun, Su, Cong, Lin, Yuxuan, Chou, Ang-Sheng, Cheng, Chao-Ching, Park, Ji-Hoon, Chiu, Ming-Hui, Lu, Ang-Yu, Tang, Hao-Ling, Tavakoli, Mohammad Mahdi, Pitner, Gregory, Ji, Xiang, Cai, Zhengyang, Mao, Nannan, Wang, Jiangtao, Tung, Vincent, Li, Ju, Bokor, Jeffrey, Zettl, Alex, Wu, Chih-I, Palacios, Tomás, Li, Lain-Jong, Kong, Jing
Published in Nature (London) (13.05.2021)
Published in Nature (London) (13.05.2021)
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Journal Article
Layered Semiconducting 2D Materials for Future Transistor Applications
Su, Sheng-Kai, Chuu, Chih-Piao, Li, Ming-Yang, Cheng, Chao-Ching, Wong, H.-S. Philip, Li, Lain-Jong
Published in Small structures (01.05.2021)
Published in Small structures (01.05.2021)
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Journal Article
Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current
Wang, Shin-Yuan, Chang, Shu-Jui, Huang, Yu-Che, Chih, Jia Hao, Lin, Yu-Chin, Cheng, Chao-Ching, Radu, Iuliana, Hu, Chenming, Chien, Chao-Hsin
Published in Applied physics letters (16.10.2023)
Published in Applied physics letters (16.10.2023)
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Journal Article
Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
Chen, Yi-Xuan, Wang, Yi-Lin, Li, Fu-Jyuan, Chang, Shu-Jui, Lee, Tsung-En, Cheng, Chao-Ching, Lee, Meng-Chien, Li, Hui-Hsuan, Lin, Yu-Hsien, Chien, Chao-Hsin
Published in IEEE transactions on nanotechnology (2024)
Published in IEEE transactions on nanotechnology (2024)
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Journal Article
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology
Chung, Yun-Yan, Shieh, Jia-Min, Su, Sheng-Kai, Chiang, Hung-Li, Chen, Tzu-Chiang, Li, Lain-Jong, Wong, H.-S. Philip, Jian, Wen-Bin, Chien, Chao-Hsin, Lu, Kuan-Cheng, Cheng, Chao-Ching, Li, Ming-Yang, Lin, Chao-Ting, Li, Chi-Feng, Chen, Jyun-Hong, Lai, Tung-Yen, Li, Kai-Shin
Published in IEEE transactions on electron devices (01.12.2019)
Published in IEEE transactions on electron devices (01.12.2019)
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Journal Article
Scaled contact length with low contact resistance in monolayer 2D channel transistors
Wu, Wen-Chia, Hung, Terry Y.T., Sathaiya, D. Mahaveer, Fan, Dongxu, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Li, Weisheng, Yu, Zhihao, Qiu, Hao, Yang, Ying-Mei, Lin, Kuang-I, Shen, Yun-Yang, Chang, Wen-Hao, Liew, San Lin, Hou, Vincent, Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Philip Wong, H.-S., Wang, Xinran, Chien, Chao-Hsin, Cheng, Chao-Ching, Radu, Iuliana P.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Assessment of carbon emission costs for air cargo transportation
Chao, Ching-Cheng
Published in Transportation research. Part D, Transport and environment (01.12.2014)
Published in Transportation research. Part D, Transport and environment (01.12.2014)
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Journal Article
Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
CHENG, Chao-Ching, CHIEN, Chao-Hsin, LUO, Guang-Li, LING, Yu-Ting, CHANG, Ruey-Dar, KEI, Chi-Chung, HSIAO, Chien-Nan, LIU, Jun-Cheng, CHANG, Chun-Yen
Published in IEEE transactions on electron devices (01.05.2009)
Published in IEEE transactions on electron devices (01.05.2009)
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Journal Article
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
Sun, Zheng, Pang, Chin-Sheng, Wu, Peng, Hung, Terry Y.T., Li, Ming-Yang, Liew, San Lin, Cheng, Chao-Ching, Wang, Han, Wong, H.-S. Philip, Li, Lain-Jong, Radu, Iuliana, Chen, Zhihong, Appenzeller, Joerg
Published in ACS nano (27.09.2022)
Published in ACS nano (27.09.2022)
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Journal Article
High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping
Ho, Po-Hsun, Yang, Yu-Ying, Chou, Sui-An, Cheng, Ren-Hao, Pao, Po-Heng, Cheng, Chao-Ching, Radu, Iuliana, Chien, Chao-Hsin
Published in Nano letters (22.11.2023)
Published in Nano letters (22.11.2023)
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Journal Article
High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts
Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I
Published in IEEE electron device letters (01.02.2021)
Published in IEEE electron device letters (01.02.2021)
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Journal Article
High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate
Luo, Guang-Li, Hsieh, Yen-Chang, Chang, Edward Yi, Pilkuhn, M. H., Chien, Chao-Hsin, Yang, Tsung-Hsi, Cheng, Chao-Ching, Chang, Chun-Yen
Published in Journal of applied physics (15.04.2007)
Published in Journal of applied physics (15.04.2007)
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Journal Article
High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method
Ho, Po-Hsun, Cheng, Ren-Hao, Pao, Po-Heng, Chou, Sui-An, Huang, Yi-Hsiu, Yang, Yu-Ying, Wu, Yu-Syuan, Su, Yuan-Chun, Mao, Po-Sen, Su, Sheng-Kai, Chou, Bo-Jhih, Chen, Edward, Hung, Terry Y. T., Li, Ming-Yang, Cheng, Chao-Ching, Woon, Wei-Yen, Liao, Szuya, Chang, Wen-Hao, Chien, Chao-Hsin
Published in ACS nano (11.07.2023)
Published in ACS nano (11.07.2023)
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Journal Article
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- [Formula Omitted] Gate Dielectric
Chao-Ching Cheng, Chao-Ching Cheng, Chao-Hsin Chien, Chao-Hsin Chien, Guang-Li Luo, Guang-Li Luo, Ching-Lun Lin, Ching-Lun Lin, Hung-Sen Chen, Hung-Sen Chen, Jun-Cheng Liu, Jun-Cheng Liu, Chi-Chung Kei, Chi-Chung Kei, Chien-Nan Hsiao, Chien-Nan Hsiao, Chun-Yen Chang, Chun-Yen Chang
Published in IEEE transactions on electron devices (01.08.2009)
Published in IEEE transactions on electron devices (01.08.2009)
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Journal Article
High-performance monolayer MoS2 nanosheet GAA transistor
Chou, Bo-Jhih, Chung, Yun-Yan, Yun, Wei-Sheng, Hsu, Chen-Feng, Li, Ming-Yang, Su, Sheng-Kai, Liew, San-Lin, Hou, Vincent Duen-Huei, Chen, Chien-Wei, Kei, Chi-Chung, Shen, Yun-Yang, Chang, Wen-Hao, Lee, T Y, Cheng, Chao-Ching, Radu, Iuliana P, Chien, Chao-Hsin
Published in Nanotechnology (18.03.2024)
Published in Nanotechnology (18.03.2024)
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Journal Article
Indicators and evaluation model for analyzing environmental protection performance of airports
Chao, Ching-Cheng, Lirn, Taih-Cherng, Lin, Hung-Chun
Published in Journal of air transport management (01.08.2017)
Published in Journal of air transport management (01.08.2017)
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Journal Article
Energy-Efficient Monolithic 3-D SRAM Cell With BEOL MoS2 FETs for SoC Scaling
Hu, Vita Pi-Ho, Su, Cheng-Wei, Lee, Yen-Wei, Ho, Tun-Yi, Cheng, Chao-Ching, Chen, Tzu-Chiang, Hung, Terry Yi-Tse, Li, Jin-Fu, Chen, Yu-Guang, Li, Lain-Jong
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article