Optimal Design of Magnetically Actuated Optical Image Stabilizer Mechanism for Cameras in Mobile Phones via Genetic Algorithm
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A Miniaturized Electromagnetic Generator With Planar Coils and Its Energy Harvest Circuit
Lun-De Liao, Chao, P.C.-P., Jian-Ting Chen, Wei-Dar Chen, Wei-Hsuan Hsu, Chi-Wei Chiu, Chin-Teng Lin
Published in IEEE transactions on magnetics (01.10.2009)
Published in IEEE transactions on magnetics (01.10.2009)
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Optimal Design of Magnetic Zooming Mechanism Used in Cameras of Mobile Phones via Genetic Algorithm
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Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance
Dong Xu, Kong, W.M.T., Xiaoping Yang, Smith, P.M., Dugas, D., Chao, P.C., Cueva, G., Mohnkern, L., Seekell, P., Pleasant, L.Mt, Schmanski, B., Duh, K.H.G., Karimy, H., Immorlica, A., Komiak, J.J.
Published in IEEE electron device letters (01.01.2008)
Published in IEEE electron device letters (01.01.2008)
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9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates
Chu, K.K., Chao, P.C., Pizzella, M.T., Actis, R., Meharry, D.E., Nichols, K.B., Vaudo, R.P., Xu, X., Flynn, J.S., Dion, J., Brandes, G.R.
Published in IEEE electron device letters (01.09.2004)
Published in IEEE electron device letters (01.09.2004)
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High performance fully selective double recess InAlAs/InGaAs/InP HEMTs
Wang, S.C., Liu, J.S., Hwang, K.C., Kong, W., Tu, D.W., Ho, P., Mohnkern, L., Nichols, K., Chao, P.C.
Published in IEEE electron device letters (01.07.2000)
Published in IEEE electron device letters (01.07.2000)
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Hydrogen-induced piezoelectric effects in InP HEMT's
Blanchard, R.R., del Alamo, J.A., Adams, S.B., Chao, P.C., Cornet, A.
Published in IEEE electron device letters (01.08.1999)
Published in IEEE electron device letters (01.08.1999)
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
Chao, P.C., Tessmer, A.J., Duh, K.-H.G., Ho, P., Kao, M.-Y., Smith, P.M., Ballingall, J.M., Liu, S.-M.J., Jabra, A.A.
Published in IEEE electron device letters (01.01.1990)
Published in IEEE electron device letters (01.01.1990)
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Spatial Variation of Fractal Parameters and Its Geological Implications
宋國城(Q. C. Sung), 陳彥杰(Y. C. Chen), 趙培文(P. C. Chao)
Published in TAO : Terrestrial, atmospheric, and oceanic sciences (01.12.1998)
Published in TAO : Terrestrial, atmospheric, and oceanic sciences (01.12.1998)
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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
Chao, P. C., Chu, Kanin, Diaz, Jose, Creamer, Carlton, Sweetland, Scott, Kallaher, Ray, McGray, Craig, Via, Glen D., Blevins, John
Published in MRS advances (01.01.2016)
Published in MRS advances (01.01.2016)
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Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
Henderson, T., Aksun, M.I., Peng, C.K., Morkoc, H., Chao, P.C., Smith, P.M., Duh, K.-H.G., Lester, L.F.
Published in IEEE electron device letters (01.12.1986)
Published in IEEE electron device letters (01.12.1986)
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Analytical HFET I- V Model in Presence of Current Collapse
Koudymov, A., Shur, M.S., Simin, G., Kanin Chu, Chao, P.C., Lee, C., Jimenez, J., Balistreri, A.
Published in IEEE transactions on electron devices (01.03.2008)
Published in IEEE transactions on electron devices (01.03.2008)
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Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique
Chao, P.C., Smith, P.M., Palmateer, S.C., Hwang, J.C.M.
Published in IEEE transactions on electron devices (01.06.1985)
Published in IEEE transactions on electron devices (01.06.1985)
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Microwave performance of 0.25-µm gate length high electron mobility transistors
Mishra, U.K., Palmateer, S.C., Chao, P.C., Smith, P.M., Hwang, J.C.M.
Published in IEEE electron device letters (01.03.1985)
Published in IEEE electron device letters (01.03.1985)
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