Electrothermal modeling of IGBTs: application to short-circuit conditions
Ammous, A., Ammous, K., Morel, H., Allard, B., Bergogne, D., Sellami, F., Chante, J.P.
Published in IEEE transactions on power electronics (01.07.2000)
Published in IEEE transactions on power electronics (01.07.2000)
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Journal Article
A 4H-SiC high-power-density VJFET as controlled current limiter
Tournier, D., Godignon, P., Montserrat, J., Planson, D., Raynaud, C., Chante, J.P., de Palma, J.-F., Sarrus, F.
Published in IEEE transactions on industry applications (01.09.2003)
Published in IEEE transactions on industry applications (01.09.2003)
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Journal Article
OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension
Raynaud, C, Wang, S.-R, Planson, D, Lazar, M, Chante, J.-P
Published in Diamond and related materials (01.09.2004)
Published in Diamond and related materials (01.09.2004)
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Journal Article
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Savkina, N.S., Lebedev, A.A., Davydov, D.V., Strel'chuk, A.M., Tregubova, A.S., Raynaud, C., Chante, J.-P., Locatelli, M.-L., Planson, D., Milan, J., Godignon, P., Campos, F.J., Mestres, N., Pascual, J., Brezeanu, G., Badila, M.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
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Journal Article
Developing an equivalent thermal model for discrete semiconductor packages
Ammous, Anis, Sellami, Fayçal, Ammous, Kaiçar, Morel, Hervé, Allard, Bruno, Chante, Jean-Pierre
Published in International journal of thermal sciences (01.05.2003)
Published in International journal of thermal sciences (01.05.2003)
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Journal Article
Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD
GALY, P, BERLAND, V, GUILHAUME, A, BLANC, F, CHANTE, J. P
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Journal Article
Conference Proceeding
Study of 6H–SiC high voltage bipolar diodes under reverse biases
Isoird, K., Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Journal Article
Conference Proceeding
LDMOS modeling for analog and RF circuit design
Canepari, A., Bertrand, G., Giry, A., Minondo, M., Blanchet, F., Jaouen, H., Reynard, B., Jourdan, N., Chante, J.-P.
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
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Conference Proceeding
Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments
Ottaviani, Laurent, Lazar, Mihai, Locatelli, Marie-Laure, Planson, Dominique, Chante, Jean-Pierre, Dubois, Christiane
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.03.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.03.2002)
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Journal Article
Optimal layout for 6H–SiC VJFET controlled current limiting device
Tournier, D., Jorda, X., Godignon, Ph, Planson, D., Chante, J.P., Sarrus, F.
Published in Diamond and related materials (01.03.2003)
Published in Diamond and related materials (01.03.2003)
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Journal Article
Conference Proceeding
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Morvan, E., Godignon, P., Montserrat, J., Fernández, J., Flores, D., Millán, J., Chante, J.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
Annealing studies of Al-implanted 6H-SiC in an induction furnace
Ottaviani, L., Lazar, M., Locatelli, M.L., Chante, J.P., Heera, V., Skorupa, W., Voelskow, M., Torchio, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Journal Article
Conference Proceeding
ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test
Guilhaume, A, Galy, P, Chante, J.P, Foucher, B, Bardy, S, Blanc, F
Published in Journal of electrostatics (01.10.2002)
Published in Journal of electrostatics (01.10.2002)
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Journal Article
Experimental characterization of a 4H–SiC high voltage current limiting device
Nallet, F., Planson, D., Godignon, P., Locatelli, M.L., Lazar, M., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Journal Article
Conference Proceeding
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
Lanois, Frédéric, Planson, Dominique, Locatelli, Marie-Laure, Lassagne, Patrick, Jaussaud, Claude, Chante, Jean-Pierre
Published in Journal of electronic materials (01.03.1999)
Published in Journal of electronic materials (01.03.1999)
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Journal Article
Aluminum multiple implantations in 6H–SiC at 300 K
Ottaviani, Laurent, Morvan, Erwan, Locatelli, Marie-Laure, Planson, Dominique, Godignon, Philippe, Chante, Jean-Pierre, Senes, Albert
Published in Solid-state electronics (01.12.1999)
Published in Solid-state electronics (01.12.1999)
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Journal Article
A BiCMOS current conveyor based four-quadrant analog multiplier
Premont, C., Abouchi, N., Grisel, R., Chante, Jean-Pierre
Published in Analog integrated circuits and signal processing (01.05.1999)
Published in Analog integrated circuits and signal processing (01.05.1999)
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Journal Article
Design of a 600 V silicon carbide vertical power MOSFET
Planson, D, Locatelli, M.L, Lanois, F, Chante, J.P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges
Guilhaume, A., Galy, P., Chante, JP, Foucher, B., Blanc, F.
Published in Microelectronics and reliability (01.09.2001)
Published in Microelectronics and reliability (01.09.2001)
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Journal Article