A 4H-SiC high-power-density VJFET as controlled current limiter
Tournier, D., Godignon, P., Montserrat, J., Planson, D., Raynaud, C., Chante, J.P., de Palma, J.-F., Sarrus, F.
Published in IEEE transactions on industry applications (01.09.2003)
Published in IEEE transactions on industry applications (01.09.2003)
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Journal Article
Study of 6H–SiC high voltage bipolar diodes under reverse biases
Isoird, K., Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Conference Proceeding
Design of an optimized IC for control algorithms of AC machines: system testing and application
Fathallah, M., Chante, J.P., Calmon, F., El-husseini, M.H.
Published in Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) (2001)
Published in Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) (2001)
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Conference Proceeding
Electrothermal modeling of IGBTs: application to short-circuit conditions
Ammous, A., Ammous, K., Morel, H., Allard, B., Bergogne, D., Sellami, F., Chante, J.P.
Published in IEEE transactions on power electronics (01.07.2000)
Published in IEEE transactions on power electronics (01.07.2000)
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Journal Article
Optimal layout for 6H–SiC VJFET controlled current limiting device
Tournier, D., Jorda, X., Godignon, Ph, Planson, D., Chante, J.P., Sarrus, F.
Published in Diamond and related materials (01.03.2003)
Published in Diamond and related materials (01.03.2003)
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Journal Article
Conference Proceeding
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Morvan, E., Godignon, P., Montserrat, J., Fernández, J., Flores, D., Millán, J., Chante, J.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
Annealing studies of Al-implanted 6H-SiC in an induction furnace
Ottaviani, L., Lazar, M., Locatelli, M.L., Chante, J.P., Heera, V., Skorupa, W., Voelskow, M., Torchio, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Conference Proceeding
ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test
Guilhaume, A, Galy, P, Chante, J.P, Foucher, B, Bardy, S, Blanc, F
Published in Journal of electrostatics (01.10.2002)
Published in Journal of electrostatics (01.10.2002)
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Journal Article
Experimental characterization of a 4H–SiC high voltage current limiting device
Nallet, F., Planson, D., Godignon, P., Locatelli, M.L., Lazar, M., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Journal Article
Conference Proceeding
Electrical characteristics modeling of large area boron
Brezeanu, G., Badila, M., Tudor, B., Godignon, P., Millan, J., Locatelli, M.L., Chante, J.P., Lebedev, A., Savkina, N.S.
Published in Solid-state electronics (01.04.2000)
Published in Solid-state electronics (01.04.2000)
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Journal Article
Lift-off technology for SiC UV detectors
Badila, M., Brezeanu, G., Millan, J., Godignon, P., Locatelli, M.L., Chante, J.P., Lebedev, A., Lungu, P., Dinca, G., Banu, V., Banoiu, G.
Published in Diamond and related materials (01.04.2000)
Published in Diamond and related materials (01.04.2000)
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Journal Article
Design of a 600 V silicon carbide vertical power MOSFET
Planson, D, Locatelli, M.L, Lanois, F, Chante, J.P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Conference Proceeding
Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method
Galy, P., Berland, V., Foucher, B., Lombaert-Valot, I., Guilhaume, A., Chante, J.P., Dufrenne, S., Bardy, S.
Published in Microelectronics and reliability (01.08.2000)
Published in Microelectronics and reliability (01.08.2000)
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Journal Article
Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures
Brezeanu, G., Badila, M., Tudor, B., Godignon, P., Millan, J., Locatelli, M.L., Chante, J.P., Lebedev, A., Savkina, N.S.
Published in Solid-state electronics (01.04.2000)
Published in Solid-state electronics (01.04.2000)
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Journal Article
Periphery protection for silicon carbide devices: state of the art and simulation
Planson, D., Locatelli, M.L., Ortolland, S., Chante, J.P., Mitlehner, H., Stephani, D.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
Ghaffour, K., Lauer, V., Souifi, A., Guillot, G., Raynaud, C., Ortolland, S., Iocatelli, M.L., Chante, J.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.1999)
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Journal Article
Conference Proceeding
Current–voltage characteristics of large area 6H-SiC pin diodes
Badila, M, Tudor, B, Brezeanu, Gh, Locatelli, M.L, Chante, J.P, Millan, J, Godignon, Ph, Lebedev, A, Banu, V
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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