Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Lee, Donguk, Kwak, Myonghoon, Moon, Kibong, Choi, Wooseok, Park, Jaehyuk, Yoo, Jongmyung, Song, Jeonghwan, Lim, Seokjae, Sung, Changhyuck, Banerjee, Writam, Hwang, Hyunsang
Published in Advanced electronic materials (01.09.2019)
Published in Advanced electronic materials (01.09.2019)
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Journal Article
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
Aga, Fekadu Gochole, Woo, Jiyong, Lee, Sangheon, Song, Jeonghwan, Park, Jaesung, Park, Jaehyuk, Lim, Seokjae, Sung, Changhyuck, Hwang, Hyunsang
Published in AIP advances (01.02.2016)
Published in AIP advances (01.02.2016)
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Journal Article
Investigation of I-V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
Sung, Changhyuck, Padovani, Andrea, Beltrando, Bastien, Lee, Donguk, Kwak, Myunghoon, Lim, Seokjae, Larcher, Luca, Della Marca, Vincenzo, Hwang, Hyunsang
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array
Park, Jaehyuk, Yoo, Jongmyung, Song, Jeonghwan, Sung, Changhyuck, Hwang, Hyunsang
Published in IEEE electron device letters (01.08.2018)
Published in IEEE electron device letters (01.08.2018)
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Journal Article
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
Aga, Fekadu Gochole, Woo, Jiyong, Song, Jeonghwan, Park, Jaehyuk, Lim, Seokjae, Sung, Changhyuck, Hwang, Hyunsang
Published in Nanotechnology (17.03.2017)
Published in Nanotechnology (17.03.2017)
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Journal Article
Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
Lim, Seokjae, Sung, Changhyuck, Kim, Hyungjun, Kim, Taesu, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang
Published in IEEE electron device letters (01.02.2018)
Published in IEEE electron device letters (01.02.2018)
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Journal Article
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system
Sung, Changhyuck, Lim, Seokjae, Kim, Hyungjun, Kim, Taesu, Moon, Kibong, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang
Published in Nanotechnology (16.03.2018)
Published in Nanotechnology (16.03.2018)
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Journal Article
Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer
Lee, Seungwoo, Banerjee, Writam, Lee, Sangmin, Sung, Changhyuck, Hwang, Hyunsang
Published in Advanced electronic materials (01.02.2021)
Published in Advanced electronic materials (01.02.2021)
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Journal Article
Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown
Changhyuck Sung, Jeonghwan Song, Sangheon Lee, Hyunsang Hwang
Published in 2016 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2016)
Published in 2016 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2016)
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Conference Proceeding
3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications
Yoo, Jongmyung, Kim, Seong Hun, Chekol, Solomon Amsalu, Park, Jaehyuk, Sung, Changhyuck, Song, Jeonghwan, Lee, Donghwa, Hwang, Hyunsang
Published in Advanced electronic materials (01.07.2019)
Published in Advanced electronic materials (01.07.2019)
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Journal Article
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
Choi, Wooseok, Moon, Kibong, Kwak, Myonghoon, Sung, Changhyuck, Lee, Jongwon, Song, Jeonghwan, Park, Jaesung, Chekol, Solomon Amsalu, Hwang, Hyunsang
Published in Solid-state electronics (01.03.2019)
Published in Solid-state electronics (01.03.2019)
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Journal Article
Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO 2 Layer
Lee, Seungwoo, Banerjee, Writam, Lee, Sangmin, Sung, Changhyuck, Hwang, Hyunsang
Published in Advanced electronic materials (01.02.2021)
Published in Advanced electronic materials (01.02.2021)
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Journal Article
Effects of Liner Thickness on the Reliability of AgTe/TiO 2 -Based Threshold Switching Devices
Song, Jeonghwan, Woo, Jiyong, Yoo, Jongmyung, Chekol, Solomon Amsalu, Lim, Seokjae, Sung, Changhyuck, Hwang, Hyunsang
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
Effect of conductance linearity and multi-level cell characteristics of TaO x -based synapse device on pattern recognition accuracy of neuromorphic system
Sung, Changhyuck, Lim, Seokjae, Kim, Hyungjun, Kim, Taesu, Moon, Kibong, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang
Published in Nanotechnology (16.03.2018)
Published in Nanotechnology (16.03.2018)
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Journal Article
Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications
Sung, Changhyuck, Padovani, Andrea, Beltrando, Bastien, Lee, Donguk, Kwak, Myunghoon, Lim, Seokjae, Larcher, Luca, Della Marca, Vincenzo, Hwang, Hyunsang
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article